CSD19536KTTT

CSD19536KTTT
Mfr. #:
CSD19536KTTT
Description:
MOSFET 100V N-Channel NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD19536KTTT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
CSD19536KTTT more Information CSD19536KTTT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
272 A
Rds On - Drain-Source Resistance:
2.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
118 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
4.7 mm
Length:
9.25 mm
Series:
CSD19536KTT
Transistor Type:
1 N-Channel
Width:
10.26 mm
Brand:
Texas Instruments
Forward Transconductance - Min:
329 S
Fall Time:
6 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.068654 oz
Tags
CSD19536K, CSD19536, CSD1953, CSD19, CSD1, CSD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 3-DDPAK/TO-263 -55 to 175
***ical
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***AS INSTRUMENTS INC
This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD19536KTTT
DISTI # 296-41136-1-ND
MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3034In Stock
  • 10:$5.3960
  • 1:$6.0400
CSD19536KTTT
DISTI # 296-41136-6-ND
MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3034In Stock
  • 10:$5.3960
  • 1:$6.0400
CSD19536KTTT
DISTI # 296-41136-2-ND
MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)
3000In Stock
  • 250:$3.8767
  • 100:$4.2958
  • 50:$4.7148
CSD19536KTTT
DISTI # CSD19536KTTT
Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R (Alt: CSD19536KTTT)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel
Asia - 0
    CSD19536KTTT
    DISTI # CSD19536KTTT
    Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19536KTTT)
    RoHS: Compliant
    Min Qty: 150
    Container: Reel
    Americas - 0
    • 150:$2.6900
    • 250:$2.5900
    • 400:$2.4900
    • 750:$2.3900
    • 1500:$2.2900
    CSD19536KTTTCSD19536KTT 100 V N-Channel NexFET&#153,Power MOSFET3414
    • 1000:$2.1700
    • 750:$2.2100
    • 500:$2.5500
    • 250:$2.9300
    • 100:$3.1400
    • 25:$3.5100
    • 10:$3.7500
    • 1:$4.1700
    CSD19536KTTT
    DISTI # 595-CSD19536KTTT
    MOSFET 100V N-Channel NexFET Power MOSFET
    RoHS: Compliant
    1708
    • 1:$5.0400
    • 10:$4.5300
    • 50:$4.5300
    • 100:$3.7100
    • 250:$3.4800
    • 500:$3.1600
    CSD19536KTT
    DISTI # 595-CSD19536KTT
    MOSFET CSD19536KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
    RoHS: Compliant
    60
    • 1:$4.4800
    • 10:$4.0300
    • 100:$3.3000
    • 250:$3.0900
    • 500:$2.8100
    CSD19536KTTT
    DISTI # 9009857P
    NEXFET N-CHANNEL MOSFET 100V 190A TO220, RL256
    • 10:£3.3000
    • 25:£3.1600
    • 50:£3.0300
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    Mfr.#: MURS360T3G

    OMO.#: OMO-MURS360T3G

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    Mfr.#: FDN342P

    OMO.#: OMO-FDN342P

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    Mfr.#: 1734035-1

    OMO.#: OMO-1734035-1-TE-CONNECTIVITY

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    Mfr.#: BLM18PG221SN1D

    OMO.#: OMO-BLM18PG221SN1D-MURATA-ELECTRONICS

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    SN65HVD1781AQDRQ1

    Mfr.#: SN65HVD1781AQDRQ1

    OMO.#: OMO-SN65HVD1781AQDRQ1-TEXAS-INSTRUMENTS

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    ABMM2-8.000MHZ-E2-T

    Mfr.#: ABMM2-8.000MHZ-E2-T

    OMO.#: OMO-ABMM2-8-000MHZ-E2-T-ABRACON

    Crystals 8MHz
    MURS360T3G

    Mfr.#: MURS360T3G

    OMO.#: OMO-MURS360T3G-ON-SEMICONDUCTOR

    Rectifiers 600V 3A Ultrafast
    FDN342P

    Mfr.#: FDN342P

    OMO.#: OMO-FDN342P-ON-SEMICONDUCTOR

    New and Original
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    Mfr.#: C1210C105M1RAC

    OMO.#: OMO-C1210C105M1RAC-1190

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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of CSD19536KTTT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $5.60
    $5.60
    10
    $5.04
    $50.40
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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