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| PartNumber | CSD19536KTT | CSD19536KTTT | CSD19536KCS |
| Description | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 100V N-Channel NexFET Power MOSFET | MOSFET 100V N-CH NexFET Pwr MOSFET |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 272 A | 272 A | 259 A |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms | 2.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 118 nC | 118 nC | 118 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 375 W | 375 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Tube |
| Height | 4.7 mm | 4.7 mm | 16.51 mm |
| Length | 9.25 mm | 9.25 mm | 10.67 mm |
| Series | CSD19536KTT | CSD19536KTT | CSD19536KCS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 10.26 mm | 10.26 mm | 4.7 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 329 S | 329 S | 307 S |
| Fall Time | 6 ns | 6 ns | 5 ns |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 500 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 32 ns | 32 ns | 38 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 14 ns |
| Unit Weight | 0.077603 oz | 0.068654 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Texas Instruments |
CSD19536KTT | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 | |
| CSD19536KTTT | MOSFET 100V N-Channel NexFET Power MOSFET | ||
| CSD19536KCS | MOSFET 100V N-CH NexFET Pwr MOSFET | ||
| CSD19536KTTT | IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET | ||
| CSD19536KCS | MOSFET N-CH 100V TO-220 | ||
| CSD19536KTT | MOSFET N-CH 100V 200A TO263 |