CSD19536

CSD19536KTT vs CSD19536KCS vs CSD19536

 
PartNumberCSD19536KTTCSD19536KCSCSD19536
DescriptionMOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175MOSFET 100V N-CH NexFET Pwr MOSFET
ManufacturerTexas InstrumentsTexas Instruments-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-263-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current272 A259 A-
Rds On Drain Source Resistance2.4 mOhms2.7 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge118 nC118 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameNexFETNexFET-
PackagingReelTube-
Height4.7 mm16.51 mm-
Length9.25 mm10.67 mm-
SeriesCSD19536KTTCSD19536KCS-
Transistor Type1 N-Channel1 N-Channel-
Width10.26 mm4.7 mm-
BrandTexas InstrumentsTexas Instruments-
Forward Transconductance Min329 S307 S-
Fall Time6 ns5 ns-
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity50050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns38 ns-
Typical Turn On Delay Time13 ns14 ns-
Unit Weight0.077603 oz0.211644 oz-
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD19536KTT MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175
CSD19536KTTT MOSFET 100V N-Channel NexFET Power MOSFET
CSD19536KCS MOSFET 100V N-CH NexFET Pwr MOSFET
CSD19536 New and Original
CSD19536KTTT IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
CSD19536KCS MOSFET N-CH 100V TO-220
CSD19536KTT MOSFET N-CH 100V 200A TO263
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