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| PartNumber | CSD25301W1015 | CSD25302Q2 | CSD25303W1015 |
| Description | MOSFET P-Ch NexFET Power MOSFETs | MOSFET PCh NexFET Pwr MOSFET | MOSFET PCh NexFET Pwr MOSFET |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DSBGA-6 | WSON-FET-6 | DSBGA-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 2.2 A | 5 A | 3 A |
| Rds On Drain Source Resistance | 75 mOhms | 49 mOhms | 56 mOhms |
| Vgs Gate Source Voltage | 8 V | 8 V | 8 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1500 mW | 2.4 W | 1.5 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.625 mm | 0.75 mm | 0.625 mm |
| Length | 1.5 mm | 2 mm | 1.5 mm |
| Series | CSD25301W1015 | CSD25302Q2 | CSD25303W1015 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1 mm | 2 mm | 1 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Fall Time | 12 ns | 1.3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2 ns | 13.2 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 8.6 ns | - |
| Typical Turn On Delay Time | 4 ns | 3.2 ns | - |
| Unit Weight | 0.000060 oz | - | 0.000060 oz |
| Qg Gate Charge | - | 2.6 nC | - |
| Forward Transconductance Min | - | 12.3 S | - |