CSD25303W1015

Mfr. #:: CSD25303W1015
Description:: MOSFET PCh NexFET Pwr MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: CSD25303W1015 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: CSD25303W1015 more Information CSD25303W1015 Product Details

Product Attribute
Attribute Value

Manufacturer:: Texas Instruments

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DSBGA-6

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 3 A

Rds On - Drain-Source Resistance:: 56 mOhms

Vgs - Gate-Source Voltage:: 8 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.5 W

Configuration:: Single

Tradename:: NexFET

Packaging:: Reel

Height:: 0.625 mm

Length:: 1.5 mm

Series:: CSD25303W1015

Transistor Type:: 1 P-Channel

Width:: 1 mm

Brand:: Texas Instruments

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.000060 oz

Tags: CSD2530, CSD253, CSD25, CSD2, CSD

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CSD25303W1015 Description

***as Instruments: P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Obsolete, LTB expires Nov-01-2014

***ure Electronics: Single N-Channel 20 V 1.5 W 8.8 nC Silicon Surface Mount Mosfet - SOT-23-6

***ical: Trans MOSFET N-CH 20V 4A Automotive 6-Pin SOT-26 T/R

***ark: Mosfet, N-Ch, 20V, 4A, Sot-26 Rohs Compliant: Yes

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***emi: PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ

***et Europe: Transistor MOSFET Array Dual P-CH 20V 3.7A 6-Pin MicroFET T/R

***ure Electronics: FDMA1023PZ Series -20 V -3.7 A 72 mOhm Dual P-Ch. PowerTrench® MOSFET-MicroFET-6

***r Electronics: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

***nell: MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

*** Source Electronics: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3

***enic: 20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

***peria: PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET

***et: Trans MOSFET Array Dual P-CH 20V 3.5A 6-Pin HUSON EP T/R

*** Americas: =""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""

***S: French Electronic Distributor since 1988

***ark: DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes

Market price

Part #	Description	Stock	Price
CSD25303W1015 DISTI # 296-28317-2-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-1-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-6-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD25303W1015 DISTI # CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015) RoHS: Not Compliant Min Qty: 1000	Americas - 0	1000:$0.3619 1002:$0.3449 2002:$0.3329 5000:$0.3219 10000:$0.3129
CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4390	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
CSD25303W1015 DISTI # 595-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T	MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2	MOSFET 20-V P-CH NexFET Pwr MOSFET
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T	MOSFET 20V P-Ch NexFET
	Mfr.#: CSD25301W1015 OMO.#: OMO-CSD25301W1015	MOSFET P-Ch NexFET Power MOSFETs
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25303W1015 OMO.#: OMO-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 5A 6SON
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 3A 6DSBGA
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS	20-V P-CHANNEL NEXFET POWER MOSF
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS	Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R

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CSD25303W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes