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| PartNumber | HGTP12N60C3D | HGTP12N60C3D G12N60C3D | HGTP12N60C3DLS |
| Description | IGBT Transistors HGTP12N60C3D | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.65 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 24 A | - | - |
| Pd Power Dissipation | 104 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTP12N60C3D | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 24 A | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 24 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTP12N60C3D_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |