HGTP12N60C3D

HGTP12N60C3D
Mfr. #:
HGTP12N60C3D
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors HGTP12N60C3D
Lifecycle:
New from this manufacturer.
Datasheet:
HGTP12N60C3D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
24 A
Pd - Power Dissipation:
104 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Series:
HGTP12N60C3D
Packaging:
Tube
Continuous Collector Current Ic Max:
24 A
Height:
9.4 mm
Length:
10.67 mm
Width:
4.83 mm
Brand:
ON Semiconductor / Fairchild
Continuous Collector Current:
24 A
Gate-Emitter Leakage Current:
+/- 100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
800
Subcategory:
IGBTs
Part # Aliases:
HGTP12N60C3D_NL
Unit Weight:
0.063493 oz
Tags
HGTP12N60C3D, HGTP12N60C, HGTP12, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***f
    P***f
    DE

    Alles ok

    2019-04-04
    M***y
    M***y
    RU

    Ok! Did not check

    2019-07-14
***ical
Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
***inecomponents.com
600V,24A,UFS SERIES NCH IGBT,W/ANTI-PARALLEL HYPERFAST DIODE
***i-Key
IGBT SMPS N-CH 600V 24A TO-220AB
***ark
Ptpigbt To220 24A 600V Rohs Compliant: Yes
***eco
3 LD PLASTIC W/EXPOSED HEATSNK <AZ
***Semiconductor
600V, UFS IGBT
***ser
IGBTs HGTP12N60C3D
***rchild Semiconductor
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
Part # Mfg. Description Stock Price
HGTP12N60C3D
DISTI # V36:1790_06359238
ON SemiconductorPTPIGBT TO220 24A 600V780
  • 800:$3.2470
HGTP12N60C3D
DISTI # V99:2348_06359238
ON SemiconductorPTPIGBT TO220 24A 600V550
  • 5000:$2.0330
  • 2500:$2.0660
  • 1000:$2.1669
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 1:$3.2470
HGTP12N60C3D
DISTI # HGTP12N60C3D-ND
ON SemiconductorIGBT 600V 24A 104W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1600:$2.0421
  • 800:$2.4214
  • 100:$2.8444
  • 10:$3.4720
  • 1:$3.8700
HGTP12N60C3D
DISTI # 30329720
ON SemiconductorPTPIGBT TO220 24A 600V780
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 5:$3.2470
HGTP12N60C3D
DISTI # 26156899
ON SemiconductorPTPIGBT TO220 24A 600V550
  • 500:$2.1900
  • 250:$2.3430
  • 100:$2.4580
  • 10:$2.8190
  • 3:$3.2470
HGTP12N60C3D
DISTI # 14141576
ON SemiconductorPTPIGBT TO220 24A 600V400
  • 10:$1.1094
HGTP12N60C3D
DISTI # HGTP12N60C3D
ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60C3D)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.5900
  • 8000:$1.4900
HGTP12N60C3D
DISTI # 58K1596
ON SemiconductorTrans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: 58K1596)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D
DISTI # 58K1596
ON SemiconductorSINGLE IGBT, 600V, 24A,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:104W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes329
  • 1:$4.0500
  • 10:$3.4400
  • 25:$3.2900
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3D.
DISTI # 27AC6332
Fairchild Semiconductor CorporationPTPIGBT TO220 24A 600V , ROHS COMPLIANT: YES0
  • 1:$4.1300
  • 10:$3.5100
  • 25:$3.3600
  • 50:$3.1400
  • 100:$2.9800
  • 250:$2.8400
  • 500:$2.5400
HGTP12N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant
30
  • 1000:$2.9600
  • 500:$3.1100
  • 100:$3.2400
  • 25:$3.3800
  • 1:$3.6400
HGTP12N60C3DON SemiconductorHGTP12N60C3D Series 600 V 24 A Flange Mount UFS N-Channel IGBT-TO-220AB
RoHS: Compliant
3999Tube
  • 5:$2.4200
  • 50:$2.2000
  • 300:$1.8300
HGTP12N60C3D
DISTI # 512-HGTP12N60C3D
ON SemiconductorIGBT Transistors HGTP12N60C3D
RoHS: Compliant
17
  • 1:$3.6800
  • 10:$3.1300
  • 100:$2.7100
  • 250:$2.5800
  • 500:$2.3100
  • 1000:$1.9500
  • 2500:$1.8500
HGTP12N60C3D
DISTI # C1S541901409674
ON SemiconductorTrans IGBT Chip N-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
550
  • 500:$2.1900
  • 100:$2.4580
  • 1:$3.2470
HGTP12N60C3D
DISTI # XSFP00000011186
Fairchild Semiconductor Corporation 
RoHS: Compliant
2691
  • 50:$4.8400
  • 2691:$4.4000
Image Part # Description
IR2117PBF

Mfr.#: IR2117PBF

OMO.#: OMO-IR2117PBF

Gate Drivers 1 HI SIDE DRVR NONINVERTING INPUT
IR21531DPBF

Mfr.#: IR21531DPBF

OMO.#: OMO-IR21531DPBF

Gate Drivers HALF BRDG DRVR 600V 15.6Vclamp 0.6
MIC4420YN

Mfr.#: MIC4420YN

OMO.#: OMO-MIC4420YN

Gate Drivers 6A Hi-Speed, Hi-Current Single MOSFET Driver
MIC4428YN

Mfr.#: MIC4428YN

OMO.#: OMO-MIC4428YN

Gate Drivers 1.5A Dual High Speed MOSFET Driver
HFA08TB60PBF

Mfr.#: HFA08TB60PBF

OMO.#: OMO-HFA08TB60PBF

Rectifiers 8A 600V Ultrafast diode
HFA15TB60PBF

Mfr.#: HFA15TB60PBF

OMO.#: OMO-HFA15TB60PBF

Rectifiers 15A 600V Ultrafast diode
IRFP460PBF

Mfr.#: IRFP460PBF

OMO.#: OMO-IRFP460PBF

MOSFET N-CH 500V HEXFET MOSFET
IRF830PBF

Mfr.#: IRF830PBF

OMO.#: OMO-IRF830PBF

MOSFET N-CH 500V HEXFET MOSFET
SPW47N60C3

Mfr.#: SPW47N60C3

OMO.#: OMO-SPW47N60C3

MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3
ECA-1HHG102

Mfr.#: ECA-1HHG102

OMO.#: OMO-ECA-1HHG102

Aluminum Electrolytic Capacitors - Radial Leaded 1000uF 50V
Availability
Stock:
715
On Order:
2698
Enter Quantity:
Current price of HGTP12N60C3D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.67
$3.67
10
$3.12
$31.20
100
$2.71
$271.00
250
$2.57
$642.50
500
$2.30
$1 150.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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