HGTP12

HGTP12N60A4 vs HGTP12N60A4D vs HGTP12N60C3

 
PartNumberHGTP12N60A4HGTP12N60A4DHGTP12N60C3
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS SeriesIGBT 600V 54A 167W TO220ABIGBT 600V 24A 104W TO220AB
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C54 A--
Pd Power Dissipation167 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max54 A--
Height9.65 mm--
Length10.67 mm--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current54 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesHGTP12N60A4_NL--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTP12N60C3D IGBT Transistors HGTP12N60C3D
HGTP12N60A4 IGBT Transistors 600V N-Channel IGBT SMPS Series
ON Semiconductor
ON Semiconductor
HGTP12N60C3D IGBT Transistors HGTP12N60C3D
HGTP12N60A4 IGBT 600V 54A 167W TO220AB
HGTP12N60A4D IGBT 600V 54A 167W TO220AB
HGTP12N60C3 IGBT 600V 24A 104W TO220AB
HGTP12N60A4D(PRFMD) New and Original
HGTP12N60A4D? PT P TO220 12A 600V SMPS
HGTP12N60B3D New and Original
HGTP12N60C3D G12N60C3D New and Original
HGTP12N60C3DLS New and Original
HGTP12N60C3DR New and Original
HGTP12N60D1 New and Original
HGTP12N60A4D 12N60A4D New and Original
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