HGTP12N60A4

Mfr. #:: HGTP12N60A4
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 600V N-Channel IGBT SMPS Series
Lifecycle:: New from this manufacturer.
Datasheet:: HGTP12N60A4 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HGTP12N60A4 Datasheet HGTP12N60A4 Datasheet (P4-P6)HGTP12N60A4 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 54 A

Pd - Power Dissipation:: 167 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 54 A

Height:: 9.65 mm

Length:: 10.67 mm

Width:: 4.83 mm

Brand:: ON Semiconductor / Fairchild

Continuous Collector Current:: 54 A

Gate-Emitter Leakage Current:: +/- 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: HGTP12N60A4_NL

Unit Weight:: 0.211644 oz

Tags: HGTP12N60A, HGTP12, HGTP1, HGTP, HGT

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTP12N60A4 Description

***ser: IGBTs 600V N-Channel IGBT SMPS Series

***i-Key: IGBT 600V 54A 167W TO220AB

***inecomponents.com: 600V SMPS Series N-Channel IGBT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes

***nell: IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1

Market price

Part #	Mfg.	Description	Stock	Price
HGTP12N60A4D DISTI # V79:2366_23246385	ON Semiconductor	PT P TO220 12A 600V SMPS	740	1600:$1.4266 800:$1.6703 100:$2.0614 10:$2.5014 1:$3.1309
HGTP12N60A4D DISTI # V36:1790_06359709	ON Semiconductor	PT P TO220 12A 600V SMPS	0	800000:$0.9099 400000:$0.9140 80000:$1.4310 8000:$2.4530 800:$2.6300
HGTP12N60A4D DISTI # HGTP12N60A4D-ND	ON Semiconductor	IGBT 600V 54A 167W TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	517In Stock	5600:$1.1900 3200:$1.2049 800:$1.5619 100:$1.9010 25:$2.2312 10:$2.3650 1:$2.6300
HGTP12N60A4 DISTI # HGTP12N60A4-ND	ON Semiconductor	IGBT 600V 54A 167W TO220AB RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
HGTP12N60A4D DISTI # 32380143	ON Semiconductor	PT P TO220 12A 600V SMPS	740	6:$3.1309
HGTP12N60A4D DISTI # 32825695	ON Semiconductor	PT P TO220 12A 600V SMPS	200	11:$0.9861
HGTP12N60A4D DISTI # HGTP12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP12N60A4D) RoHS: Compliant Min Qty: 1	Europe - 200	1000:€1.0229 500:€1.0609 100:€1.1019 50:€1.1459 25:€1.1939 10:€1.3019 1:€1.4329
HGTP12N60A4D DISTI # HGTP12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP12N60A4D) RoHS: Compliant Min Qty: 188 Container: Bulk	Americas - 0	940:$1.5900 1880:$1.5900 188:$1.6900 376:$1.6900 564:$1.6900
HGTP12N60A4D DISTI # HGTP12N60A4D	ON Semiconductor	Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP12N60A4D) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$0.9259 4800:$0.9499 3200:$0.9619 1600:$0.9739 800:$0.9809
HGTP12N60A4D DISTI # 05M3595	ON Semiconductor	IGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes	1888	5000:$1.2300 2500:$1.2700 1000:$1.5600 500:$1.7400 100:$1.8800 10:$2.3500 1:$2.7600
HGTP12N60A4 DISTI # 512-HGTP12N60A4	ON Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series RoHS: Compliant	0
HGTP12N60A4D DISTI # 512-HGTP12N60A4D	ON Semiconductor	IGBT Transistors 600V N-Channel IGBT SMPS Series RoHS: Compliant	0
HGTP12N60A4	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor RoHS: Compliant	679	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
HGTP12N60A4D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	92185	1000:$1.0900 500:$1.1500 100:$1.2000 25:$1.2500 1:$1.3400
HGTP12N60A4	Harris Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	900	1000:$1.3600 500:$1.4300 100:$1.4900 25:$1.5500 1:$1.6700
HGTP12N60A4D	Fairchild Semiconductor Corporation		54
HGTP12N60A4D DISTI # HGTP12N60A4D	ON Semiconductor	Transistor: IGBT,600V,23A,167W,TO220-3	708	500:$1.2300 100:$1.3200 25:$1.4600 5:$1.8200 1:$2.1300
HGTP12N60A4D	Fairchild Semiconductor Corporation	RoHS: Not Compliant	800
HGTP12N60A4D DISTI # 1057676	ON Semiconductor	IGBT, TO-220 RoHS: Compliant	1878	1600:$2.2100 800:$2.6700 100:$3.2500 10:$4.0300 1:$4.4900
HGTP12N60A4D DISTI # 1057676	ON Semiconductor	IGBT, TO-220	2644	500:£1.4000 250:£1.5500 100:£1.7000 10:£2.1200 1:£2.6600

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HGTP12N60A4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes