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HGTP12N60A4

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Symbol
Features
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60A4 TO-220AB 12N60A4
HGTG12N60A4 TO-247 12N60A4
HGT1S12N60A4S9A TO-263AB 12N60A4
NOTE: When ordering, use the entire part number.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet August 2003
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
54 A
At T
C
= 110
o
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
23 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GES
±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±30 V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250µA, V
GE
= 0V 600 - - V
Emitter to Collector Breakdown Voltage BV
ECS
I
C
= -10mA, V
GE
= 0V 20 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250 µA
T
J
= 125
o
C--2.0mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
T
J
= 25
o
C-2.02.7V
T
J
= 125
o
C-1.62.0V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250µA, V
CE
= 600V - 5.6 - V
Gate to Emitter Leakage Current I
GES
V
GE
= ±20V - - ±250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
60 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 12A, V
CE
= 300V - 8 - V
On-State Gate Charge Q
g(ON)
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V - 78 96 nC
V
GE
= 20V - 97 120 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
=15V
R
G
= 10Ω
L = 500µH
Test Circuit (Figure 20)
-17 - ns
Current Rise Time t
rI
-8 - ns
Current Turn-Off Delay Time t
d(OFF)I
-96 - ns
Current Fall Time t
fI
-18 - ns
Turn-On Energy (Note 3) E
ON1
-55 - µJ
Turn-On Energy (Note 3) E
ON2
- 160 - µJ
Turn-Off Energy (Note 2) E
OFF
-50 - µJ
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10Ω
L = 500µH
Test Circuit (Figure 20)
-17 - ns
Current Rise Time t
rI
-16 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 110 170 ns
Current Fall Time t
fI
-7095ns
Turn-On Energy (Note 3) E
ON1
-55 - µJ
Turn-On Energy (Note 3) E
ON2
- 250 350 µJ
Turn-Off Energy (Note 2) E
OFF
- 175 285 µJ
Thermal Resistance Junction To Case R
θJC
- - 0.75
o
C/W
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
25 75 100 125 150
60
50
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
20
300 400200100 500 600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 200µH
T
C
V
GE
15V
75
o
C
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
3010 20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 10Ω, L = 500µH, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
9101112 15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13 14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
P1-P3P4-P6P7-P8

HGTP12N60A4

Mfr. #:
Buy HGTP12N60A4
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lifecycle:
New from this manufacturer.
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