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HGTP12N60A4

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
00.51.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
4
8
1.5 2 2.5
16
20
12
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 12V
24
T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0 0.5 1.0 1.5 2 2.5
4
8
16
12
20
24
0
E
ON2
, TURN-ON ENERGY LOSS (µJ)
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
64 10121416818202224
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10Ω, L = 500µH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
2
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
µ
J)
0
50
200
100
250
350
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
642 101214168 18202224
R
G
= 10
Ω
, L = 500
µ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
10
11
12
13
14
15
642 101214168 18202224
16
17
18
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 10Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
4
16
12
8
642 10121416818202224
20
32
28
24
R
G
= 10Ω, L = 500µH, V
CE
= 390V
T
J
= 125
o
C, OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
482
95
6
85
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
12
115
1614
105
110
10
100
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 10Ω, L = 500µH,
V
CE
= 390V
18 20 22 24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
10
30
20
50
70
40
60
R
G
= 10Ω, L = 500µH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
4826 12161410 18 20 22 24
80
90
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
137 8 9 10 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
200
14 15
250
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
16
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2
14
0
4
10
I
G(REF)
= 1mA, R
L
= 25Ω, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
8
12
16
V
CE
= 600V
10 20 30 40 6050 70 800
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
0
0.2
0.4
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
0.6
1.0
12525 150
1.2
0.8
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 10Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
0.1
10 100
R
G
, GATE RESISTANCE (Ω)
1
51000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
I
CE
= 12A
I
CE
= 24A
I
CE
= 6A
10
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 5 10 15 20 25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
89
1.9
10 12
2.0
2.2
2.1
11 13 14 15 16
2.3
2.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 18A
I
CE
= 12A
I
CE
= 6A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs, T
J
= 25
o
C
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
R
G
= 10Ω
L = 500µH
V
DD
= 390V
+
-
RHRP660
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
P1-P3P4-P6P7-P8

HGTP12N60A4

Mfr. #:
Buy HGTP12N60A4
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lifecycle:
New from this manufacturer.
Delivery:
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