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| PartNumber | IAUT150N10S5N035ATMA1 | IAUT165N08S5N029ATMA2 | IAUT165N08S5N029 |
| Description | MOSFET MOSFET_(75V,120V( | MOSFET MOSFET_(75V,120V( | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | HSOF-8 | HSOF-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 80 V | - |
| Id Continuous Drain Current | 150 A | 165 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 2.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 67 nC | 90 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 166 W | 167 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 26 ns | 29 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7 ns | 9 ns | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | - |
| Typical Turn On Delay Time | 12 ns | 13 ns | - |
| Part # Aliases | IAUT150N10S5N035 SP001416126 | IAUT165N08S5N029 SP001585162 | - |
| Moisture Sensitive | - | Yes | - |