IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2
Mfr. #:
IAUT165N08S5N029ATMA2
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET_(75V,120V(
Lifecycle:
New from this manufacturer.
Datasheet:
IAUT165N08S5N029ATMA2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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HTML Datasheet:
IAUT165N08S5N029ATMA2 DatasheetIAUT165N08S5N029ATMA2 Datasheet (P4-P6)IAUT165N08S5N029ATMA2 Datasheet (P7-P9)
ECAD Model:
More Information:
IAUT165N08S5N029ATMA2 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
HSOF-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
165 A
Rds On - Drain-Source Resistance:
2.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
90 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
167 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Brand:
Infineon Technologies
Fall Time:
29 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
IAUT165N08S5N029 SP001585162
Tags
IAUT1, IAUT, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
80V, N-Ch, 2.9 mΩ max, Automotive MOSFET, TOLL, OptiMOS™-5, PG-HSOF-8, RoHS
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
***ark
Mosfet, Aec-Q101, N-Ch, 80V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IAUT165N08S5N029ATMA2
DISTI # V72:2272_17076701
Infineon Technologies AGOptiMOS 5 Power Transistor1897
  • 1000:$1.7370
  • 500:$2.0820
  • 250:$2.3700
  • 100:$2.4240
  • 25:$2.5700
  • 10:$2.8550
  • 1:$3.7202
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2CT-ND
Infineon Technologies AG80V 165A 2.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1987In Stock
  • 1000:$1.9536
  • 500:$2.3165
  • 100:$2.7211
  • 10:$3.3210
  • 1:$3.7000
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2DKR-ND
Infineon Technologies AG80V 165A 2.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1987In Stock
  • 1000:$1.9536
  • 500:$2.3165
  • 100:$2.7211
  • 10:$3.3210
  • 1:$3.7000
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2TR-ND
Infineon Technologies AGMOSFET N-CH 165A 80V 120V 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$1.8019
IAUT165N08S5N029ATMA2
DISTI # 29545009
Infineon Technologies AGOptiMOS 5 Power Transistor2000
  • 2000:$1.6497
IAUT165N08S5N029ATMA2
DISTI # 29722698
Infineon Technologies AGOptiMOS 5 Power Transistor1897
  • 4:$3.7202
IAUT165N08S5N029ATMA2
DISTI # SP001585162
Infineon Technologies AGOptiMOS 80V 165A HSOF-8 (Alt: SP001585162)
RoHS: Compliant
Min Qty: 2000
Europe - 4000
  • 20000:€1.3900
  • 12000:€1.4900
  • 8000:€1.5900
  • 4000:€1.6900
  • 2000:€1.7900
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2
Infineon Technologies AGOptiMOS 80V 165A HSOF-8 - Tape and Reel (Alt: IAUT165N08S5N029ATMA2)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 12000:$1.5900
  • 20000:$1.5900
  • 4000:$1.6900
  • 8000:$1.6900
  • 2000:$1.7900
IAUT165N08S5N029ATMA2
DISTI # 59AC7031
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:165A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1900
  • 1000:$1.8200
  • 500:$2.1600
  • 250:$2.4000
  • 100:$2.5400
  • 50:$2.6700
  • 25:$2.8000
  • 10:$2.9300
  • 1:$3.4400
IAUT165N08S5N029ATMA2
DISTI # 726-IAUT165N08S5N029
Infineon Technologies AGMOSFET MOSFET_(75V,120V(
RoHS: Compliant
2076
  • 1:$3.4100
  • 10:$2.9000
  • 100:$2.5100
  • 250:$2.3800
  • 500:$2.1400
  • 1000:$1.8000
  • 2000:$1.7100
  • 4000:$1.6500
IAUT165N08S5N029ATMA2
DISTI # XSKDRABV0021062
Infineon Technologies AG 
RoHS: Compliant
6000 in Stock0 on Order
  • 6000:$2.3100
  • 2000:$2.4700
IAUT165N08S5N029ATMA2
DISTI # 2888476
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF
RoHS: Compliant
1900
  • 1000:$2.6400
  • 500:$2.6900
  • 250:$2.8400
  • 100:$3.0000
  • 10:$3.3900
  • 1:$3.6300
IAUT165N08S5N029ATMA2
DISTI # 2888476
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF1790
  • 500:£1.5000
  • 250:£1.8200
  • 100:£1.8500
  • 10:£2.2100
  • 1:£2.8300
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IAUT150N10S5N035ATMA1

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2N7002PW,115

Mfr.#: 2N7002PW,115

OMO.#: OMO-2N7002PW-115

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IS43TR16256AL-125KBL

Mfr.#: IS43TR16256AL-125KBL

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DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IAUT165N08S5N029ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.41
$3.41
10
$2.90
$29.00
100
$2.51
$251.00
250
$2.38
$595.00
500
$2.14
$1 070.00
1000
$1.80
$1 800.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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