IAUT165N08S5N029ATMA2

P1-P3 P4-P6 P7-P9

IAUT165N08S5N029

OptiMOS™-5 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

165 A

T

C

=100 °C,

V

GS

=10 V

2)

120

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

660

Avalanche energy, single pulse

2)

E

AS

I

D

=83 A

225 mJ

Avalanche current, single pulse

I

AS

-

165 A

Gate source voltage

V

GS

-±20V

Power dissipation

P

tot

T

C

=25 °C

167 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

80 V

R

DS(on)

2.9

m

I

D

165 A

Product Summary

Type Package Marking

IAUT165N08S5N012

P/G-HSOF-8-1 5N08029

H-PSOF-8-1

8

1

1

8

Tab

Tab

R

ev. 1.0 page 1 2016-05-25

IAUT165N08S5N029

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

---0.9K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

2)

V

(BR)DSS

V

GS

=0 V,

I

D

=1 mA

80 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=108 µA

2.2 3 3.8

Zero gate voltage drain current

2)

I

DSS

V

DS

=80 V, V

GS

=0 V,

T

j

=25 °C

-0.11µA

V

DS

=50 V, V

GS

=0 V,

T

j

=85 °C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=6 V, I

D

=40 A

-2.94.4mΩ

V

GS

=10 V, I

D

=80 A

-2.42.9

Values

R

ev. 1.0 page 2 2016-05-25

IAUT165N08S5N029

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 4900 6370 pF

Output capacitance

C

oss

- 790 1027

Reverse transfer capacitance

C

rss

-3654

Turn-on delay time

t

d(on)

-13-ns

Rise time

t

r

-9-

Turn-off delay time

t

d(off)

-23-

Fall time

t

f

-29-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-2431nC

Gate to drain charge

Q

gd

-1523

Gate charge total

Q

g

-7090

Gate plateau voltage

V

plateau

-5.0-V

Reverse Diode

Diode continous forward current

2)

I

S

- - 165 A

Diode pulse current

2)

I

S,pulse

- - 660

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=100 A,

T

j

=25 °C

-0.91.2V

Reverse recovery time

2)

t

rr

-60-ns

Reverse recovery charge

2)

Q

rr

-96-nC

Values

V

GS

=0 V, V

DS

=40 V,

f=1 MHz

V

DD

=40 V, V

GS

=10 V,

I

D

=100 A, R

G

=3.5 

V

DD

=40 V, I

D

=100 A,

V

GS

=0 to 10 V

2)

Defined by design. Not subject to production test.

1)

Current is limited by bondwire; with an R

thJC

= 0.9 K/W the chip is able to carry 171A at 25°C.

V

R

=40 V, I

F

=50A,

di

F

/dt=100 A/µs

T

C

=25 °C

R

ev. 1.0 page 3 2016-05-25

P1-P3 P4-P6 P7-P9

IAUT165N08S5N029ATMA2

Mfr. #:

Buy IAUT165N08S5N029ATMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFET_(75V,120V(

Lifecycle:

New from this manufacturer.

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IAUT165N08S5N029ATMA2