 | ||
| PartNumber | IAUT150N10S5N035ATMA1 | IAUT165N08S5N029ATMA2 |
| Description | MOSFET MOSFET_(75V,120V( | MOSFET MOSFET_(75V,120V( |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | HSOF-8 | HSOF-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 80 V |
| Id Continuous Drain Current | 150 A | 165 A |
| Rds On Drain Source Resistance | 3.5 mOhms | 2.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 67 nC | 90 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 166 W | 167 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 26 ns | 29 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 9 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 23 ns |
| Typical Turn On Delay Time | 12 ns | 13 ns |
| Part # Aliases | IAUT150N10S5N035 SP001416126 | IAUT165N08S5N029 SP001585162 |
| Moisture Sensitive | - | Yes |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IAUT150N10S5N035ATMA1 | MOSFET MOSFET_(75V,120V( | |
| IAUT165N08S5N029ATMA2 | MOSFET MOSFET_(75V,120V( | ||
| IAUT150N10S5N035ATMA1 | 100V 150A 3.5MOHM TOLL | ||
| IAUT165N08S5N029ATMA2 | MOSFET N-CH 165A 80V 120V 8HSOF | ||
| IAUT165N08S5N029 | New and Original |