IHW30N120R vs IHW30N120R(H30R120) vs IHW30N120R2

 
PartNumberIHW30N120RIHW30N120R(H30R120)IHW30N120R2
DescriptionIGBT Transistors REVERSE CONDUCT IGBT 1200V 30AIGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Manufacturer--Infineon Technologies
Product Category--IGBTs - Single
Series--TrenchStopR
Packaging--Tube
Part Aliases--IHW30N120R2FKSA1 SP000212017
Unit Weight--1.340411 oz
Mounting Style--Through Hole
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--PG-TO247-3
Configuration--Single
Power Max--390W
Reverse Recovery Time trr---
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--NPT, Trench Field Stop
Current Collector Pulsed Icm--90A
Vce on Max Vge Ic--1.8V @ 15V, 30A
Switching Energy--3.1mJ
Gate Charge--198nC
Td on off 25°C---/792ns
Test Condition--600V, 30A, 28 Ohm, 15V
Pd Power Dissipation--390 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 40 C
Collector Emitter Voltage VCEO Max--1.2 kV
Collector Emitter Saturation Voltage--2 V
Continuous Collector Current at 25 C--30 A
Maximum Gate Emitter Voltage--+/- 20 V
Continuous Collector Current Ic Max--30 A
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