IHW30N120R2

IHW30N120R2
Mfr. #:
IHW30N120R2
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
Lifecycle:
New from this manufacturer.
Datasheet:
IHW30N120R2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
IGBTs - Single
Series
TrenchStopR
Packaging
Tube
Part-Aliases
IHW30N120R2FKSA1 SP000212017
Unit-Weight
1.340411 oz
Mounting-Style
Through Hole
Package-Case
TO-247-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
PG-TO247-3
Configuration
Single
Power-Max
390W
Reverse-Recovery-Time-trr
-
Current-Collector-Ic-Max
60A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT-Type
NPT, Trench Field Stop
Current-Collector-Pulsed-Icm
90A
Vce-on-Max-Vge-Ic
1.8V @ 15V, 30A
Switching-Energy
3.1mJ
Gate-Charge
198nC
Td-on-off-25°C
-/792ns
Test-Condition
600V, 30A, 28 Ohm, 15V
Pd-Power-Dissipation
390 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 40 C
Collector-Emitter-Voltage-VCEO-Max
1.2 kV
Collector-Emitter-Saturation-Voltage
2 V
Continuous-Collector-Current-at-25-C
30 A
Maximum-Gate-Emitter-Voltage
+/- 20 V
Continuous-Collector-Current-Ic-Max
30 A
Tags
IHW30N120R2, IHW30N120R, IHW30N12, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube
*** Electronic Components
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
***nell
IGBT+ DIODE,1200V,30A,TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Power Dissipation Max: 390W; Transistor Type: IGBT
Part # Mfg. Description Stock Price
IHW30N120R2
DISTI # IHW30N120R2-ND
Infineon Technologies AGIGBT 1200V 60A 390W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IHW30N120R2
    DISTI # 726-IHW30N120R2
    Infineon Technologies AGIGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
    RoHS: Compliant
    0
      IHW30N120R2Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant
      10
      • 1000:$2.5400
      • 500:$2.6800
      • 100:$2.7900
      • 25:$2.9100
      • 1:$3.1300
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      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of IHW30N120R2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $3.14
      $3.14
      10
      $2.98
      $29.78
      100
      $2.82
      $282.15
      500
      $2.66
      $1 332.40
      1000
      $2.51
      $2 508.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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