IHW30N160R2 vs IHW30N160R vs IHW30N160R2 H30R1602

 
PartNumberIHW30N160R2IHW30N160RIHW30N160R2 H30R1602
DescriptionIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
ManufacturerInfineonInfineo-
Product CategoryIGBT TransistorsIC Chips-
RoHSYDetails-
TechnologySi--
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1600 V1.6 kV-
Collector Emitter Saturation Voltage1.8 V2.35 V-
Maximum Gate Emitter Voltage20 V+/- 25 V-
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation312 W312 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Series600V TRENCHSTOPIHW30N160-
PackagingTubeTube-
Height20.95 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIHW30N160R2FKSA1 IHW3N16R2XK SP000273701IHW30N160R2FKSA1 IHW30N160R2XK SP000273701-
Unit Weight1.340411 oz1.340411 oz-
Continuous Collector Current Ic Max-60 A-
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