IHW30N160R2

IHW30N160R2
Mfr. #:
IHW30N160R2
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
Lifecycle:
New from this manufacturer.
Datasheet:
IHW30N160R2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1600 V
Collector-Emitter Saturation Voltage:
1.8 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
312 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
600V TRENCHSTOP
Packaging:
Tube
Height:
20.95 mm
Length:
15.9 mm
Width:
5.3 mm
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IHW30N160R2FKSA1 IHW3N16R2XK SP000273701
Unit Weight:
1.340411 oz
Tags
IHW30N160R2, IHW30N16, IHW30N1, IHW30N, IHW3, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    J***a
    J***a
    MX

    Excellent product, new and original same as description, highly recommended seller.

    2019-01-24
    O***v
    O***v
    RU

    Works well. Do not forget to remove the film from the sensor after soldering the connector, the flux fills the sensor.

    2019-02-06
    E***l
    E***l
    MX

    Good service. And product thank you

    2019-05-31
Part # Mfg. Description Stock Price
IHW30N160R2FKSA1
DISTI # V36:1790_06378532
Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8013
  • 500:$4.0500
  • 250:$4.5550
  • 100:$4.8410
  • 50:$5.1440
  • 25:$5.4509
  • 10:$5.7630
  • 1:$7.5163
IHW30N160R2FKSA1
DISTI # IHW30N160R2FKSA1-ND
Infineon Technologies AGIGBT 1600V 60A 312W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
  • 240:$4.3952
IHW30N160R2FKSA1
DISTI # 32439532
Infineon Technologies AGTrans IGBT Chip N-CH 1600V 60A 312000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
8013
  • 500:$4.0500
  • 250:$4.5550
  • 100:$4.8410
  • 50:$5.1440
  • 25:$5.4509
  • 10:$5.7630
  • 3:$6.8330
IHW30N160R2XK
DISTI # IHW30N160R2FKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 1.6KV 60A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IHW30N160R2FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1200:$2.6900
  • 2400:$2.6900
  • 720:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IHW30N160R2FKSA1
DISTI # 13T9432
Infineon Technologies AGIGBT+ DIODE, 1.6KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.6kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 500:$3.6000
  • 250:$4.0100
  • 100:$4.2200
  • 50:$4.4400
  • 25:$4.6600
  • 10:$4.8800
  • 1:$5.7400
IHW30N160R2FKSA1
DISTI # 726-IHW30N160R2FKSA1
Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant
0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2
DISTI # 726-IHW30N160R2
Infineon Technologies AGIGBT Transistors RC-IGBT MONO DIODE 1600V 30A
RoHS: Compliant
0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IHW30N160R2FKSA1
DISTI # 7528334P
Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, TU1460
  • 10:£3.3100
IHW30N160R2FKSA1
DISTI # 7528334
Infineon Technologies AGTRANSISTOR IGBT N-CH 1.6KV 60A TO247, EA998
  • 10:£3.3100
  • 1:£5.5800
IHW30N160R2FKSA1
DISTI # 1832388
Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant
4500
  • 500:$5.4700
  • 250:$6.1000
  • 100:$6.4300
  • 10:$7.4300
  • 1:$8.7400
IHW30N160R2FKSA1
DISTI # 1832388
Infineon Technologies AGIGBT+ DIODE,1600V,30A,TO247
RoHS: Compliant
4590
  • 500:£2.8300
  • 250:£3.1500
  • 100:£3.3200
  • 10:£3.8400
  • 1:£4.9900
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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of IHW30N160R2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.68
$5.68
10
$4.83
$48.30
100
$4.18
$418.00
250
$3.97
$992.50
500
$3.56
$1 780.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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