IKZ75N65EH5XKSA1 vs IKZ75N65EH5 vs IKZ75N65EH5 K75EEH5

 
PartNumberIKZ75N65EH5XKSA1IKZ75N65EH5IKZ75N65EH5 K75EEH5
DescriptionIGBT Transistors IGBT PRODUCTSTrans IGBT Chip N-CH 650V 90A 4-Pin(4+Tab) TO-247
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-4--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C90 A--
Pd Power Dissipation395 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesTRENCHSTOP 5 H5TrenchStop 5-
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKZ75N65EH5 SP001160046--
Part Aliases-IKZ75N65EH5 SP001160046-
Package Case-TO-247-4-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-PG-TO247-4-
Power Max-395W-
Reverse Recovery Time trr-58ns-
Current Collector Ic Max-90A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type---
Current Collector Pulsed Icm-300A-
Vce on Max Vge Ic-2.1V @ 15V, 75A-
Switching Energy-680μJ (on), 430μJ (off)-
Gate Charge-166nC-
Td on off 25°C-26ns/347ns-
Test Condition-400V, 37.5A, 10 Ohm, 15V-
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