IKZ75N65EH5XKSA1

Mfr. #:: IKZ75N65EH5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IKZ75N65EH5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IKZ75N65EH5XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-4

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 90 A

Pd - Power Dissipation:: 395 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: TRENCHSTOP 5 H5

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKZ75N65EH5 SP001160046

Tags: IKZ75N65EH, IKZ75N65E, IKZ7, IKZ

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IKZ75N65EH5XKSA1 Description

***ure Electronics: IKZ75N65EH5 Series 650 V 90 A Through Hole DuoPack IGBT - PG-TO-247-4

***ark: Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:4Pins; Rohs Compliant: Yes |Infineon IKZ75N65EH5XKSA1

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***ical: Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.2pF 50volts C0G +/-0.1pF

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ark: Igbt, Single, 650V, 90A, To-247; Dc Collector Current:90A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***ical: Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.1pF 50volts C0G +/-0.25pF

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ark: Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***ow.cn: Trans IGBT Chip N-CH 650V 85A 273000mW 4-Pin(4+Tab) TO-247 Tube

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ark: Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:273W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.50pF 25volts C0G +/-0.1pF

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***ow.cn: Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 161A, To-247; Dc Collector Current:161A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:4Pins; Rohs Compliant: Yes |Infineon IGZ100N65H5XKSA1

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

***et: Trans IGBT Chip N-CH 650V 119A 4-Pin TO-247 Tube

***ineon SCT: To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin, PG-TO247-4, RoHS

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

IKZ75N65EH5XKSA1 More Information

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Home Appliance Solutions: Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

Part #	Mfg.	Description	Stock	Price
IKZ75N65EH5XKSA1 DISTI # 32028891	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube	480	3:$3.9686
IKZ75N65EH5XKSA1 DISTI # IKZ75N65EH5XKSA1-5-ND	Infineon Technologies AG	IGBT 650V 90A W/DIO TO247-4 RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$6.2847
IKZ75N65EH5XKSA1 DISTI # V99:2348_06376922	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube	0	240000:$4.2110 120000:$4.2140 24000:$4.5470 2400:$5.1650 240:$5.2700
IKZ75N65EH5XKSA1 DISTI # V36:1790_06376922	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 395000mW 4-Pin(4+Tab) TO-247 Tube	0	240000:$3.9170 120000:$3.9210 24000:$4.3370 2400:$5.1330 240:$5.2700
IKZ75N65EH5XKSA1 DISTI # SP001160046	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube (Alt: SP001160046) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 240	1000:€3.4900 500:€3.6900 100:€3.8900 50:€3.9900 25:€4.1900 10:€4.2900 1:€4.6900
IKZ75N65EH5XKSA1 DISTI # IKZ75N65EH5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube - Bulk (Alt: IKZ75N65EH5XKSA1) RoHS: Compliant Min Qty: 87 Container: Bulk	Americas - 0	870:$3.5900 435:$3.6900 261:$3.7900 174:$3.9900 87:$4.0900
IKZ75N65EH5XKSA1 DISTI # IKZ75N65EH5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 90A 4-Pin TO-247 Tube - Rail/Tube (Alt: IKZ75N65EH5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.1900 1440:$4.2900 960:$4.4900 480:$4.5900 240:$4.7900
IKZ75N65EH5XKSA1 DISTI # 34AC1637	Infineon Technologies AG	IGBT, SINGLE, 650V, 90A, TO-247,DC Collector Current:90A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes	1910	500:$5.7100 250:$6.1900 100:$6.4500 50:$6.8900 25:$7.3200 10:$7.6300 1:$8.3700
IKZ75N65EH5XKSA1	Infineon Technologies AG	IKZ75N65EH5 Series 650 V 90 A Through Hole DuoPack IGBT - PG-TO-247-4 RoHS: Not Compliant	15Tube	240:$3.9600
IKZ75N65EH5XKSA1 DISTI # 726-IKZ75N65EH5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	508	1:$7.9900 10:$7.2300 25:$6.8900 100:$5.9800 250:$5.7100 500:$5.2100
IKZ75N65EH5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	80	1000:$3.8200 500:$4.0200 100:$4.1800 25:$4.3600 1:$4.7000
IKZ75N65EH5XKSA1 DISTI # 1623291	Infineon Technologies AG	IGBT 650V 75A TRENCHSTOP5 DIODE TO-247, TU	130	600:£3.7460 300:£4.0210 150:£4.3400 30:£4.7150
IKZ75N65EH5XKSA1 DISTI # IKZ75N65EH5	Infineon Technologies AG	Transistor: IGBT,650V,75A,197W,TO247-4,Series: H5	14	30:$5.4100 10:$6.0100 3:$6.8100 1:$7.5700
IKZ75N65EH5XKSA1 DISTI # IKZ75N65EH5	Infineon Technologies AG	650V 90A 395W TO247-4 RoHS: Compliant	230	1:€7.5000 10:€4.5000 50:€3.5000 100:€3.3700
IKZ75N65EH5XKSA1 DISTI # 2781037	Infineon Technologies AG	IGBT, SINGLE, 650V, 90A, TO-247 RoHS: Compliant	1910	10:$7.2100 5:$8.1600 1:$8.7200
IKZ75N65EH5XKSA1 DISTI # XSKDRABV0021138	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$5.5500 240:$5.9500
IKZ75N65EH5XKSA1 DISTI # 2781037	Infineon Technologies AG	IGBT, SINGLE, 650V, 90A, TO-247	1910	100:£4.5600 50:£4.9100 10:£5.2600 5:£6.1000 1:£6.6400

Image	Part #	Description
	Mfr.#: IKQ75N120CH3XKSA1 OMO.#: OMO-IKQ75N120CH3XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: FFSH1665A OMO.#: OMO-FFSH1665A	Schottky Diodes & Rectifiers 650V 16A SIC SBD
	Mfr.#: SF-0603FP015F-2 OMO.#: OMO-SF-0603FP015F-2	Surface Mount Fuses .15A Fast Act Prec 0603 SinglFuse
	Mfr.#: CRCW0603200KFKEAC OMO.#: OMO-CRCW0603200KFKEAC	Thick Film Resistors - SMD 1/10Watt 200Kohms 1% Commercial Use
	Mfr.#: IKQ75N120CH3XKSA1 OMO.#: OMO-IKQ75N120CH3XKSA1-INFINEON-TECHNOLOGIES	IGBT HS SW 1200V 75A TO-247-3
	Mfr.#: CRCW06031M00FKEAC OMO.#: OMO-CRCW06031M00FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 1M0 1% ET1
	Mfr.#: CRCW0603200KFKEAC OMO.#: OMO-CRCW0603200KFKEAC-VISHAY-DALE	Standard Thick Film Chip Resistors
	Mfr.#: CRCW060315K0FKEAC OMO.#: OMO-CRCW060315K0FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 15K 1% ET1
	Mfr.#: C0805X105K3RAC7210 OMO.#: OMO-C0805X105K3RAC7210-KEMET	CAP, 1F, 25V, 10%, X7R, 0805
	Mfr.#: FFSH1665A OMO.#: OMO-FFSH1665A-ON-SEMICONDUCTOR	650V 16A SIC SBD

IKZ75N65EH5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes