IPA030N10N3 G vs IPA030N10N3GXKSA1 vs IPA030N10

 
PartNumberIPA030N10N3 GIPA030N10N3GXKSA1IPA030N10
DescriptionMOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current79 A--
Rds On Drain Source Resistance3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge47 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation41 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height16.15 mm16.15 mm-
Length10.65 mm10.65 mm-
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm4.85 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time37 ns-37 ns
Product TypeMOSFETMOSFET-
Rise Time38 ns-38 ns
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time112 ns-112 ns
Typical Turn On Delay Time42 ns-42 ns
Part # AliasesIPA030N10N3GXKSA1 IPA3N1N3GXK SP000464914G IPA030N10N3 IPA3N1N3GXK SP000464914-
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Part Aliases--IPA030N10N3GXK IPA030N10N3GXKSA1 SP000464914
Package Case--TO-220-3
Pd Power Dissipation--41 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--79 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--3 mOhms
Qg Gate Charge--47 nC
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