IPA030N10N3GXKSA1

Mfr. #:: IPA030N10N3GXKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET MV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: IPA030N10N3GXKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Tradename:: OptiMOS

Packaging:: Tube

Height:: 16.15 mm

Length:: 10.65 mm

Width:: 4.85 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: G IPA030N10N3 IPA3N1N3GXK SP000464914

Unit Weight:: 0.211644 oz

Tags: IPA030N10N, IPA030, IPA03, IPA0, IPA

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IPA030N10N3GXKSA1 Description

***p One Stop: Trans MOSFET N-CH 100V 79A Automotive 3-Pin(3+Tab) TO-220FP Tube

***(Formerly Allied Electronics): N-Channel MOSFET; 79 A; 100 V OptiMOS 3; 3-Pin TO-220FP Infineon

***ponent Stockers USA: 79 A 100 V 0.003 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N-CH, 100V, 79A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 37 / Rise Time ns = 38 / Turn-OFF Delay Time ns = 112 / Turn-ON Delay Time ns = 42 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 41

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ark: MOSFET Transistor, N Channel, 40 A, 100 V, 12 mohm, 10 V, 3 V RoHS Compliant: Yes

***icroelectronics: N-Channel 100V - 0.012Ohm - 80A - TO-220FP LOW GATE CHARGE STripFET(TM) POWER MOSFET

***ure Electronics: N-Channel 100 V 15 mO Flange Mount STripFET II Power Mosfet - TO-220FP

***et: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220FP Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 45 W

***(Formerly Allied Electronics): MOSFET N-Ch 100V 80A UltraFET II TO220FP

***nell: MOSFET, N CH, 100V, 38A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po

***r Electronics: Power Field-Effect Transistor, 38A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB

*** Source Electronics: MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W

***roFlash: Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V

***ure Electronics: Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop Global: Trans MOSFET N-CH 100V 88A 3-Pin(3+Tab) TO-220AB Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J +/-5%

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***p One Stop Global: Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB

***enic: 100V 85A 250W 10.5m´Î@10V30A 3V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-220-3 Through Hole MOSFET (Metal Oxide) N-Channel Tube 10.5m Ω @ 30A, 10V 85A Tc -55°C~175°C TJ MOSFET N-CH 100V 85A TO220AB

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:100V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; Current Id Max:85A; Package / Case:TO-220; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 38A TO-220FP

***ure Electronics: N-Channel 100 V 15 mOhm Flange Mount STripFET II Power MOSFET - TO-220

***enic: 100V 80A 300W 15m´Î@10V40A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

Part #	Mfg.	Description	Stock	Price
IPA030N10N3GXKSA1 DISTI # 20145798	Infineon Technologies AG	Trans MOSFET N-CH 100V 79A Automotive 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	10	5:$2.7751
IPA030N10N3GXKSA1 DISTI # IPA030N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 79A TO220-FP RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$3.6823
IPA030N10N3GXKSA1 DISTI # C1S322000560866	Infineon Technologies AG	Trans MOSFET N-CH 100V 79A Automotive 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	13	10:$5.6300 1:$6.9400
IPA030N10N3GXK DISTI # IPA030N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 79A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA030N10N3GXKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$2.8900 1000:$2.7900 2000:$2.5900 3000:$2.5900 5000:$2.4900
IPA030N10N3GXKSA1 DISTI # 50Y1994	Infineon Technologies AG	MOSFET Transistor, N Channel, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V RoHS Compliant: Yes	0	1:$5.3400 10:$4.5400 25:$4.3400 50:$4.1400 100:$3.9400 250:$3.7400 500:$3.3500
IPA030N10N3 G DISTI # 726-IPA030N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3 RoHS: Compliant	0	1:$5.3400 10:$4.5400 100:$3.9400 250:$3.7400 500:$3.3500
IPA030N10N3GXKSA1 DISTI # 8977431P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 79A OPTIMOS TO220, TU	448	26:£3.0750
IPA030N10N3GXKSA1 DISTI # 2480791	Infineon Technologies AG	MOSFET, N-CH, 100V, 79A, TO-220FP-3 RoHS: Compliant	0	1:$8.4600 10:$7.1900 100:$6.2400 250:$5.9300 500:$5.3100
IPA030N10N3GXKSA1 DISTI # 2480791	Infineon Technologies AG	MOSFET, N-CH, 100V, 79A, TO-220FP-3 RoHS: Compliant	0	1:£4.0200 10:£3.1400 100:£3.0400 250:£2.5500 500:£2.2800

Image	Part #	Description
	Mfr.#: IPA030N10N3 G OMO.#: OMO-IPA030N10N3-G	MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
	Mfr.#: IPA030N10N3GXKSA1 OMO.#: OMO-IPA030N10N3GXKSA1	MOSFET MV POWER MOS
	Mfr.#: IPA030N10 OMO.#: OMO-IPA030N10-1190	New and Original
	Mfr.#: IPA030N10N3 G OMO.#: OMO-IPA030N10N3-G-1190	MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
	Mfr.#: IPA030N10N3G OMO.#: OMO-IPA030N10N3G-1190	New and Original
	Mfr.#: IPA030N10N3GXKSA1 OMO.#: OMO-IPA030N10N3GXKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 79A TO220-FP

IPA030N10N3GXKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes