IPA030

IPA030N10N3 G vs IPA030N10 vs IPA030N10N3G

 
PartNumberIPA030N10N3 GIPA030N10IPA030N10N3G
DescriptionMOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
ManufacturerInfineonInfineon TechnologiesINFINEON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current79 A--
Rds On Drain Source Resistance3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge47 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation41 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.85 mm--
BrandInfineon Technologies--
Fall Time37 ns37 ns-
Product TypeMOSFET--
Rise Time38 ns38 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time112 ns112 ns-
Typical Turn On Delay Time42 ns42 ns-
Part # AliasesIPA030N10N3GXKSA1 IPA3N1N3GXK SP000464914--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-IPA030N10N3GXK IPA030N10N3GXKSA1 SP000464914-
Package Case-TO-220-3-
Pd Power Dissipation-41 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-79 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-3 mOhms-
Qg Gate Charge-47 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPA030N10N3 G MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
IPA030N10N3GXKSA1 MOSFET N-CH 100V 79A TO220-FP
Infineon Technologies
Infineon Technologies
IPA030N10N3GXKSA1 MOSFET MV POWER MOS
IPA030N10 New and Original
IPA030N10N3 G MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
IPA030N10N3G New and Original
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