 |  | | |
| PartNumber | IPB60R120P7ATMA1 | IPB60R120C7ATMA1 | IPB60R125C6 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 26 A | - | 30 A |
| Rds On Drain Source Resistance | 100 mOhms | - | 125 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 36 nC | - | 96 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 95 W | - | 219 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | - | 7 nS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 14 ns | - | 12 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 81 ns | - | 83 nS |
| Typical Turn On Delay Time | 21 ns | - | - |
| Part # Aliases | IPB60R120P7 SP001664922 | IPB60R120C7 SP001385048 | IPB60R125C6ATMA1 IPB6R125C6XT SP000687456 |
| Tradename | - | CoolMOS | CoolMOS |
| Height | - | 4.4 mm | 4.4 mm |
| Length | - | 10 mm | 10 mm |
| Series | - | CoolMOS C7 | CoolMOS C6 |
| Width | - | 9.25 mm | 9.25 mm |
| Unit Weight | - | 0.077603 oz | 0.139332 oz |