IPD031N03LGATMA1 vs IPD031N03L G vs IPD031N03LGBTMA1

 
PartNumberIPD031N03LGATMA1IPD031N03L GIPD031N03LGBTMA1
DescriptionMOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3MOSFET N-Ch 30V 90A DPAK-2
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current90 A90 A90 A
Rds On Drain Source Resistance2.6 mOhms2.6 mOhms3.1 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge33 nC33 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation94 W94 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS 3OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min50 S50 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns6 ns-
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time34 ns34 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesG IPD031N03L IPD31N3LGXT SP000680554IPD031N03LGATMA1 IPD31N3LGXT SP000680554G IPD031N03L IPD31N3LGXT SP000236957
Unit Weight0.139332 oz0.139332 oz0.139332 oz
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