IPD031N03LGATMA1

Mfr. #:: IPD031N03LGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPD031N03LGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 2.6 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 33 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 94 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 50 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 6 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 34 ns

Typical Turn-On Delay Time:: 9 ns

Part # Aliases:: G IPD031N03L IPD31N3LGXT SP000680554

Unit Weight:: 0.139332 oz

Tags: IPD031N03LG, IPD031N03L, IPD031N03, IPD031, IPD03, IPD0, IPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPD031N03LGATMA1 Description

***(Formerly Allied Electronics): IPD031N03L G N-channel MOSFET Transistor; 90 A; 30 V; 3-Pin TO-252

***ment14 APAC: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:94W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***(Formerly Allied Electronics): MOSFET; N-Channel; 30V; 100A; 2.1 mOhm max; 29 nC Qg; PQFN 5x6

***el Electronic: Transistor: N-MOSFET; unipolar; HEXFET; 30V; 32A; 3.6W; PQFN5X6

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package, PG-TDSON-8, RoHS

***ure Electronics: Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***Yang: Trans MOSFET N-CH 30V 32A 8-Pin QFN EP T/R - Tape and Reel

***ark: N CHANNEL MOSFET, 30V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0021ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 30V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 100W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),TO-252AA

***emi: PowerTrench® MOSFET, N-Channel, 30V, 94A, 4.7mΩ

***ment14 APAC: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Source Voltage Vds:30V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 94A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 94A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ure Electronics: Single N-Channel 30 V 9 mOhm 27 nC HEXFET® Power Mosfet - TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; 30V; 89A; 9 MOHM; 27 NC QG; LOGIC LEVEL; D-PAK

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:91A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***et: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.001uF 50 volts 10%

***nell: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po

***emi: PowerTrench® MOSFET, N-Channel, 30V, 116A, 5.1mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),TO-252AA

***r Electronics: Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ark: Transistor,mosfet,n-Channel,30V V(Br)Dss,15A I(D),to-252Aa Rohs Compliant: Yes

***emi: PowerTrench® MOSFET, N-Channel, 30V, 73A, 8.2mΩ

***r Electronics: Power Field-Effect Transistor, 15A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

Part #	Mfg.	Description	Stock	Price
IPD031N03LGATMA1 DISTI # V72:2272_06384300	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2698	1000:$0.5099 500:$0.6523 250:$0.7448 100:$0.7563 25:$0.9860 10:$1.0973 1:$1.2893
IPD031N03LGATMA1 DISTI # V36:1790_06384300	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.4202 1250000:$0.4205 250000:$0.4550 25000:$0.5193 2500:$0.5302
IPD031N03LGATMA1 DISTI # IPD031N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD031N03LGATMA1 DISTI # IPD031N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 90A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD031N03LGATMA1 DISTI # IPD031N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 90A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.5302
IPD031N03LGATMA1 DISTI # 26195420	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2698	14:$1.2893
IPD031N03LGATMA1 DISTI # 31699868	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4324
IPD031N03LGXT DISTI # IPD031N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD031N03LGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4449 15000:$0.4559 10000:$0.4679 5000:$0.4799 2500:$0.4939
IPD031N03LGATMA1 DISTI # 60R2684	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 90A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	624	1000:$0.5470 500:$0.6930 100:$0.7840 10:$1.0200 1:$1.1900
IPD031N03LGATMA1 DISTI # 726-IPD031N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 RoHS: Compliant	3476	1:$1.1800 10:$1.0100 100:$0.7760 500:$0.6860 1000:$0.5420 2500:$0.4800 10000:$0.4620
IPD031N03L G DISTI # 726-IPD031N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 RoHS: Compliant	1924	1:$1.1800 10:$1.0100 100:$0.7760 500:$0.6860 1000:$0.5420 2500:$0.4800 10000:$0.4620
IPD031N03LGATMA1 DISTI # IPD031N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,79A,94W,PG-TO252-3	479	100:$0.5879 10:$0.6768 3:$0.8435 1:$0.9809
IPD031N03LGATMA1 DISTI # 1775565	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO252-3	8304	500:£0.5330 250:£0.5690 100:£0.6040 10:£0.8440 1:£1.0500
IPD031N03LGATMA1 DISTI # XSKDRABV0044859	Infineon Technologies AG	RoHS: Compliant	12500 in Stock0 on Order	12500:$0.6053 2500:$0.6486
IPD031N03LGATMA1 DISTI # 1775565	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO252-3 RoHS: Compliant	5624	2500:$0.7230 1000:$0.8170 500:$1.0300 100:$1.1700 10:$1.5200 1:$1.7800

Image	Part #	Description
	Mfr.#: CY2305CSXI-1H OMO.#: OMO-CY2305CSXI-1H	Clock Buffer 3.3VZDB IND
	Mfr.#: ispPAC-POWR1220AT8-02TN100I OMO.#: OMO-ISPPAC-POWR1220AT8-02TN100I	Supervisory Circuits Prec. Power Supply Seq. Monitor Marg.
	Mfr.#: MSS1P4-M3/89A OMO.#: OMO-MSS1P4-M3-89A	Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
	Mfr.#: MIMXRT1064DVL6A OMO.#: OMO-MIMXRT1064DVL6A	Processors - Application Specialized MIMXRT1064DVL6A/LFBGA196///TRAY MULTIPLE DP BAKEAB
	Mfr.#: SP7652ER-L/TR OMO.#: OMO-SP7652ER-L-TR	Switching Controllers WIDE INPUT VOLTAGE RANGE, 3A 600k
	Mfr.#: GRM155C80J106ME11D OMO.#: OMO-GRM155C80J106ME11D	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 10uF 6.3volts *Derate Voltage/Temp
	Mfr.#: ISPPAC-POWR1220AT8-02TN100I OMO.#: OMO-ISPPAC-POWR1220AT8-02TN100I-LATTICE-SEMICONDUCTOR	Supervisory Circuits Prec. Power Supply Seq. Monitor Marg.
	Mfr.#: TPS82140SILR OMO.#: OMO-TPS82140SILR-TEXAS-INSTRUMENTS	DC DC CONVERTER 0.9-6V
	Mfr.#: MSS1P4-M3/89A OMO.#: OMO-MSS1P4-M3-89A-VISHAY	Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
	Mfr.#: CY2305CSXI-1H OMO.#: OMO-CY2305CSXI-1H-CYPRESS-SEMICONDUCTOR	Phase Locked Loops - PLL 3.3VZDB IND

IPD031N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes