| PartNumber | IPD031N03LGATMA1 | IPD031N03LGBTMA1 |
| Description | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 90A DPAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 90 A | 90 A |
| Rds On Drain Source Resistance | 2.6 mOhms | 3.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 33 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 94 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 50 S | - |
| Fall Time | 5 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | - |
| Typical Turn On Delay Time | 9 ns | - |
| Part # Aliases | G IPD031N03L IPD31N3LGXT SP000680554 | G IPD031N03L IPD31N3LGXT SP000236957 |
| Unit Weight | 0.139332 oz | 0.139332 oz |