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| PartNumber | IPD320N20N3GATMA1 | IPD320N20N3G 320N20N | IPD320N20N3 G |
| Description | MOSFET MV POWER MOS | Trans MOSFET N-CH 200V 34A 3-Pin TO-252 T/R (Alt: IPD320N20N3 G) | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 34 A | - | - |
| Rds On Drain Source Resistance | 32 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 28 S | - | - |
| Fall Time | 4 ns | - | 4 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | 9 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | 21 ns |
| Typical Turn On Delay Time | 11 ns | - | 11 ns |
| Part # Aliases | G IPD320N20N3 SP001127832 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPD320N20N3GBTMA1 IPD320N20N3GXT SP000677838 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 136 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 34 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 32 mOhms |
| Qg Gate Charge | - | - | 22 nC |
| Forward Transconductance Min | - | - | 55 S 28 S |