IPD320N20N3GATMA1

Mfr. #:: IPD320N20N3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET MV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: IPD320N20N3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 34 A

Rds On - Drain-Source Resistance:: 32 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 22 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 136 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 28 S

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: G IPD320N20N3 SP001127832

Unit Weight:: 0.139332 oz

Tags: IPD320N20N3G, IPD32, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPD320N20N3GATMA1 Description

***ure Electronics: Single N-Channel 200 V 32 mOhm 22 nC OptiMOS Power Mosfet - DPAK

***roFlash: Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 200V, 34A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

***(Formerly Allied Electronics): Infineon IRFR4620TRLPBF N-channel MOSFET; 24 A; 200 V HEXFET; 3-Pin DPAK

***ure Electronics: Single N-Channel 200 V 78 mOhm 38 nC HEXFET® Power Mosfet - TO-252AA

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

*** Source Electronics: MOSFET N-CH 200V 24A DPAK / Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***(Formerly Allied Electronics): AUIRFR4620 N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin TO-252AA

***ineon SCT: Automotive Q101 200V Single N-Channel HEXFET Power MOSFET in a D-PAK Package, DPAK-3, RoHS

***ical: Trans MOSFET N-CH Si 200V 24A Automotive 3-Pin(2+Tab) DPAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ark: Mosfet, N Channel, 200V, 24A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.064Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***emi: N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ

***ure Electronics: N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ

***ure Electronics: FDD2572 Series 150 V 29 A 54 mOhm N-Channel PowerTrench Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: LED Indication - Discrete 3 (168 Hours) Tape & Reel (TR) Surface Mount 0603 (1608 Metric) Orange Rectangle with Flat Top 1.93V Standard LED ORANGE DIFFUSED SMD

***nell: MOSFET, AEC-Q101, N-CH, 150V, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 135W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench FDD Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 150 V 0.136 Ohm 51 nC 107 W Silicon SMT Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK

***nell: MOSFET,N CH,W DIODE,150V,25A,TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 107W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V

Market price

Part #	Mfg.	Description	Stock	Price
IPD320N20N3GATMA1 DISTI # V72:2272_13979452	Infineon Technologies AG	Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R	2445	1000:$1.7500 500:$1.8310 250:$2.1220 100:$2.1990 25:$2.4690 10:$2.7430 1:$3.5475
IPD320N20N3GATMA1 DISTI # V36:1790_13979452	Infineon Technologies AG	Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R	0
IPD320N20N3GATMA1 DISTI # IPD320N20N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 34A RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2376In Stock	1000:$1.4469 500:$1.7463 100:$2.1255 10:$2.6440 1:$2.9400
IPD320N20N3GATMA1 DISTI # IPD320N20N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 34A RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2376In Stock	1000:$1.4469 500:$1.7463 100:$2.1255 10:$2.6440 1:$2.9400
IPD320N20N3GATMA1 DISTI # IPD320N20N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 34A RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$1.2918 2500:$1.3079
IPD320N20N3GATMA1 DISTI # 32928307	Infineon Technologies AG	Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK T/R	2445	1000:$1.7500 500:$1.8310 250:$2.1220 100:$2.1990 25:$2.4690 10:$2.7430 5:$3.5475
IPD320N20N3GATMA1 DISTI # IPD320N20N3GATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPD320N20N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$1.1724 15000:$1.1937 10000:$1.2352 5000:$1.2815 2500:$1.3295
IPD320N20N3GATMA1 DISTI # 47W3471	Infineon Technologies AG	MOSFET, N CHANNEL, 200V, 34A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	3028	1000:$1.3400 500:$1.6300 100:$1.8600 10:$2.3200 1:$2.7400
IPD320N20N3GATMA1. DISTI # 15AC3079	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:136W,No. of Pins:3Pins RoHS Compliant: Yes	0	25000:$1.1800 15000:$1.2000 10000:$1.2400 5000:$1.2900 1:$1.3300
IPD320N20N3GATMA1 DISTI # 726-IPD320N20N3GATMA	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	11751	1:$2.7100 10:$2.3000 100:$1.8400 500:$1.6100 1000:$1.3300 2500:$1.2400 5000:$1.2000
IPD320N20N3GATMA1 DISTI # 1702294	Infineon Technologies AG	MOSFET N-CH 200V 34A OPTIMOS3 DPAK, RL	2450	5000:£0.8900 2500:£0.9090
IPD320N20N3GATMA1 DISTI # 2212824	Infineon Technologies AG	MOSFET, N-CH, 200V, 34A, TO252-3	3143	500:£1.2500 250:£1.3400 100:£1.4300 10:£1.8000 1:£2.3800

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Availability

Stock:: 12
On Order:: 1995
Enter Quantity:

Current price of IPD320N20N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.71~~; ~~$2.71~~

10: ~~$2.30~~; ~~$23.00~~

100: ~~$1.84~~; ~~$184.00~~

500: ~~$1.61~~; ~~$805.00~~

1000: ~~$1.33~~; ~~$1 330.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPD320N20N3GATMA1

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