IPD320N20N3G

IPD320N20N3GATMA1 vs IPD320N20N3GBTMA1

 
PartNumberIPD320N20N3GATMA1IPD320N20N3GBTMA1
DescriptionMOSFET MV POWER MOSMOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V
Id Continuous Drain Current34 A34 A
Rds On Drain Source Resistance32 mOhms27 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge22 nC29 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation136 W136 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesOptiMOS 3XPD320N20
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min28 S28 S
Fall Time4 ns4 ns
Product TypeMOSFETMOSFET
Rise Time9 ns9 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time21 ns21 ns
Typical Turn On Delay Time11 ns11 ns
Part # AliasesG IPD320N20N3 SP001127832G IPD320N20N3 IPD320N20N3GXT SP000677838
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD320N20N3GATMA1 MOSFET MV POWER MOS
IPD320N20N3GBTMA1 MOSFET N-CH 200V 34A TO252-3
IPD320N20N3GATMA1 MOSFET N-CH 200V 34A
Infineon Technologies
Infineon Technologies
IPD320N20N3GBTMA1 MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3
IPD320N20N3G 320N20N New and Original
IPD320N20N3G New and Original
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