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| PartNumber | IPW60R017C7XKSA1 | IPW60R017C7 | IPW60R017C7 60C7017 |
| Description | MOSFET | HIGH POWER_NEW_RO_TUBE (Alt: IPW60R017C7) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 109 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 240 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 446 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS C7 | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 106 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | IPW60R017C7 SP001313542 | - | - |
| Unit Weight | 0.211644 oz | - | - |