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IPW60R017C7XKSA1

IPW60R017C7XKSA1
Mfr. #:
IPW60R017C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R017C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW60R017C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
109 A
Rds On - Drain-Source Resistance:
17 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
240 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
446 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C7
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
25 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
106 ns
Typical Turn-On Delay Time:
30 ns
Part # Aliases:
IPW60R017C7 SP001313542
Unit Weight:
0.211644 oz
Tags
IPW60R017, IPW60R01, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 17 mOhm 240 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 109A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:109A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPW60R017C7XKSA1
DISTI # V99:2348_16141112		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube
RoHS: Compliant		0
    IPW60R017C7XKSA1
    DISTI # V36:1790_16141112    		Infineon Technologies AGTrans MOSFET N-CH 600V 109A Tube
    RoHS: Compliant    		0
      IPW60R017C7XKSA1
      DISTI # IPW60R017C7XKSA1-ND      		Infineon Technologies AGHIGH POWER_NEW
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Temporarily Out of Stock
      • 240:$17.5997
      IPW60R017C7XKSA1
      DISTI # SP001313542      		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube (Alt: SP001313542)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 270
      • 1:€15.2900
      • 10:€13.9900
      • 25:€13.3900
      • 50:€12.8900
      • 100:€12.3900
      • 500:€11.9900
      • 1000:€11.1900
      IPW60R017C7XKSA1
      DISTI # IPW60R017C7XKSA1      		Infineon Technologies AGTrans MOSFET N-CH 650V 109A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R017C7XKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 240:$14.4900
      • 480:$13.9900
      • 960:$13.4900
      • 1440:$13.0900
      • 2400:$12.7900
      IPW60R017C7XKSA1
      DISTI # 49AC0306      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:109A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes442
      • 250:$14.6800
      • 100:$15.3900
      • 50:$16.3000
      • 25:$17.2100
      • 10:$18.0200
      • 1:$19.5400
      IPW60R017C7XKSA1
      DISTI # 726-IPW60R017C7XKSA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		0
      • 1:$19.5400
      • 5:$19.3400
      • 10:$18.0200
      • 25:$17.2100
      • 100:$15.3900
      • 250:$14.6800
      IPW60R017C7XKSA1
      DISTI # XSKDRABS0034513      		Infineon Technologies AG 
      RoHS: Compliant      		180 in Stock0 on Order
      • 180:$18.8400
      • 30:$20.1840
      IPW60R017C7XKSA1
      DISTI # 2839474      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247
      RoHS: Compliant      		875
      • 250:$21.5900
      • 100:$21.9500
      • 50:$22.7000
      • 10:$23.5100
      • 5:$24.8500
      • 1:$25.3200
      IPW60R017C7XKSA1
      DISTI # 2839474      		Infineon Technologies AGMOSFET, N-CH, 600V, 109A, TO-247
      RoHS: Compliant      		442
      • 10:£14.1000
      • 5:£15.8500
      • 1:£16.0200
      Image Part # Description
      BSC340N08NS3 G

      Mfr.#: BSC340N08NS3 G

      OMO.#: OMO-BSC340N08NS3-G

      		 MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
      CBR06C101FAGAC

      Mfr.#: CBR06C101FAGAC

      OMO.#: OMO-CBR06C101FAGAC

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 100pF C0G 0603 1%
      C0805C105K3RACTM

      Mfr.#: C0805C105K3RACTM

      OMO.#: OMO-C0805C105K3RACTM-428

      		 Cap Ceramic 1uF 25V X7R 10% Pad SMD 0805 125C T/R
      CRCW08053K30FKEAC

      Mfr.#: CRCW08053K30FKEAC

      OMO.#: OMO-CRCW08053K30FKEAC-VISHAY-DALE

      		 D12/CRCW0805-C 100 3K3 1% ET1
      CRCW080510K0JNEAC

      Mfr.#: CRCW080510K0JNEAC

      OMO.#: OMO-CRCW080510K0JNEAC-VISHAY-DALE

      		 D12/CRCW0805-C 200 10K 5% ET1
      BSC340N08NS3 G

      Mfr.#: BSC340N08NS3 G

      OMO.#: OMO-BSC340N08NS3-G-1190

      		 Trans MOSFET N-CH 80V 7A 8-Pin TDSON T/R (Alt: BSC340N08NS3 G)
      CRCW12061M00FKEAC

      Mfr.#: CRCW12061M00FKEAC

      OMO.#: OMO-CRCW12061M00FKEAC-VISHAY-DALE

      		 D25/CRCW1206-C 100 1M0 1% ET1
      CBR06C101FAGAC

      Mfr.#: CBR06C101FAGAC

      OMO.#: OMO-CBR06C101FAGAC-KEMET

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 100pF C0G 0603 1%
      CRCW08051K00JNEAC

      Mfr.#: CRCW08051K00JNEAC

      OMO.#: OMO-CRCW08051K00JNEAC-VISHAY-DALE

      		 D12/CRCW0805-C 200 1K0 5% ET1
      CRCW0805100KJNEAC

      Mfr.#: CRCW0805100KJNEAC

      OMO.#: OMO-CRCW0805100KJNEAC-VISHAY-DALE

      		 D12/CRCW0805-C 200 100K 5% ET1
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of IPW60R017C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $19.54
      $19.54
      5
      $19.34
      $96.70
      10
      $18.02
      $180.20
      25
      $17.21
      $430.25
      100
      $15.39
      $1 539.00
      250
      $14.68
      $3 670.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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