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| PartNumber | IRF8910GTRPBF | IRF8910 | IRF8910PBF |
| Description | MOSFET MOSFT DUAL NCh 20V 10A | INSTOCK | MOSFET 2N-CH 20V 10A 8-SOIC |
| Manufacturer | Infineon | IR | Infineon Technologies |
| Product Category | MOSFET | IC Chips | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 13.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.55 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | Dual |
| Packaging | Reel | - | Tube Alternate Packaging |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 24 S | - | - |
| Fall Time | 4.1 ns | - | 4.1 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | 10 ns |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001575420 | - | - |
| Unit Weight | 0.017870 oz | - | 0.019048 oz |
| Series | - | - | HEXFETR |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 960pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 10A |
| Rds On Max Id Vgs | - | - | 13.4 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 2.55V @ 250μA |
| Gate Charge Qg Vgs | - | - | 11nC @ 4.5V |
| Pd Power Dissipation | - | - | 2 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 10 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 18.3 mOhms |
| Typical Turn Off Delay Time | - | - | 9.7 ns |
| Typical Turn On Delay Time | - | - | 6.2 ns |
| Qg Gate Charge | - | - | 7.4 nC |
| Channel Mode | - | - | Enhancement |