IRF8910GTRPBF

Mfr. #:: IRF8910GTRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT DUAL NCh 20V 10A
Lifecycle:: New from this manufacturer.
Datasheet:: IRF8910GTRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8910GTRPBF Datasheet IRF8910GTRPBF Datasheet (P4-P6)IRF8910GTRPBF Datasheet (P7-P9)IRF8910GTRPBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 10 A

Rds On - Drain-Source Resistance:: 13.4 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.55 V

Qg - Gate Charge:: 11 nC

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2 W

Configuration:: Dual

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 2 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 24 S

Fall Time:: 4.1 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001575420

Unit Weight:: 0.017870 oz

Tags: IRF8910, IRF891, IRF89, IRF8, IRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8910GTRPBF Description

***et: Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

***ineon SCT: Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: DUAL N CH MOSFET, 20V, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):10.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.55V ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRF8910PBF Dual N-channel MOSFET Transistor; 10 A; 20 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes

***ure Electronics: Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET

***ment14 APAC: N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***hard Electronics: ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -11A, 14mΩ

***Yang: Trans MOSFET P-CH 20V 11A 8-Pin SOIC N T/R - Tape and Reel

***enic: 20V 11A 14m´Î@4.5V11A 2.5W 1.5V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Source Voltage Vds:-20V; On Resistance

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET is in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

***nell: MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -830mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -830mV; Voltage Vgs Rds on Measurement: -4.5V

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet -SOIC-8

***enic: 20V 9.4A 14m´Î@4.5V9.4A 900mW 1.5V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, NN; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:9.4A; Current Id Max:9.4A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):14mohm; Package / Case:SO-8; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Market price

Part #	Mfg.	Description	Stock	Price
IRF8910GTRPBF DISTI # IRF8910GTRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF8910GTRPBF DISTI # IRF8910GTRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF8910GTRPBF DISTI # IRF8910GTRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF8910GTRPBF DISTI # 70019662	Infineon Technologies AG	MOSFET,DUAL N-CHANNEL,20V,10A,SO-8,HALOGEN-FREE RoHS: Compliant	0	4000:$1.0600 8000:$1.0390 20000:$1.0070 40000:$0.9650 100000:$0.9010
IRF8910GTRPBF DISTI # 942-IRF8910GTRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL NCh 20V 10A RoHS: Compliant	0

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IRF8910GTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes