IRF8910GTRPBF Datasheet IRF8910GTRPBF | P1-P3

www.irf.com 1

7/10/09

IRF8910GPbF

HEXFET

®

Power MOSFET

Notes  through  are on page 10

SO-8

Benefits

l Very Low R

DS(on)

at 4.5V V

GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l 20V V

GS

Max. Gate Rating

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Applications

l Dual SO-8 MOSFET for POL

converters in desktop, servers,

graphics cards, game consoles

and set-top box

l Lead-Free

l Halogen-Free

V

DSS

R

DS(on)

max I

D

20V

13.4m @V

GS

= 10V

10A

PD -96257

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Power Dissipation W

P

D

@T

A

= 70°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead

––– 42 °C/W

R

θJA

Junction-to-Ambient

––– 62.5

Max.

10

8.3

82

± 20

20

-55 to + 150

2.0

0.016

1.3

IRF8910GPbF

2 www.irf.com

S

D

G

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. T

y

p. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 10.7 13.4

mΩ

––– 14.6 18.3

V

GS(th)

Gate Threshold Voltage 1.65 ––– 2.55 V

∆

V

GS(th)

/

∆

T

J

Gate Threshold Voltage Coefficient ––– -4.8 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 24 ––– ––– S

Q

g

Total Gate Charge ––– 7.4 11

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 2.4 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 0.80 ––– nC

Q

gd

Gate-to-Drain Charge ––– 2.5 –––

Q

godr

Gate Charge Overdrive ––– 1.7 ––– See Fig. 6

Q

sw

Switch Char

g

e (Q

gs2

+ Q

gd

)

––– 3.3 –––

Q

oss

Output Charge ––– 4.4 ––– nC

t

d(on)

Turn-On Delay Time ––– 6.2 –––

t

r

Rise Time –––10––– ns

t

d(off)

Turn-Off Delay Time ––– 9.7 –––

t

f

Fall Time ––– 4.1 –––

C

iss

Input Capacitance ––– 960 –––

C

oss

Output Capacitance ––– 300 ––– pF

C

rss

Reverse Transfer Capacitance ––– 160 –––

Avalanche Characteristics

Parameter Units

E

AS

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy

mJ

I

AR

A

va

l

anc

h

e

C

urrent

A

Diode Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– ––– 2.5

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 82

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 17 26 ns

Q

rr

Reverse Recovery Charge ––– 6.5 9.7 nC

–––

I

D

= 8.2A

V

GS

= 0V

V

DS

= 10V

V

GS

= 4.5V, I

D

= 8.0A

V

GS

= 4.5V

Typ.

–––

V

DS

= V

GS

, I

D

= 250µA

Clamped Inductive Load

V

DS

= 10V, I

D

= 8.2A

V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

T

J

= 25°C, I

F

= 8.2A, V

DD

= 10V

di/dt = 100A/

µ

s

T

J

= 25°C, I

S

= 8.2A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

MOSFET symbol

V

DS

= 10V, V

GS

= 0V

V

DD

= 10V, V

GS

= 4.5V

I

D

= 8.2A

V

DS

= 10V

V

GS

= 20V

V

GS

= -20V

V

DS

= 16V, V

GS

= 0V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 10A

Conditions

Max.

19

8.2

ƒ = 1.0MHz

IRF8910GPbF

www.irf.com 3

Fig 4. Normalized On-Resistance

vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

8.0V

5.5V

4.5V

3.5V

3.0V

2.8V

BOTTOM 2.5V

≤

60µs PULSE WIDTH

Tj = 25°C

2.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

≤

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

8.0V

5.5V

4.5V

3.5V

3.0V

2.8V

BOTTOM 2.5V

1 2 3 4 5 6

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 10V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 10A

V

GS

= 10V

IRF8910GTRPBF

IRF8910GTRPBF

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