PartNumber | IRGB20B60PD1PBF | IRGB-20B60PD1 | IRGB20B60PD1PBF,IRGB20B6 |
Description | IGBT Transistors 600V Warp2 150kHz | ||
Manufacturer | Infineon | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-220-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2.05 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 40 A | - | - |
Pd Power Dissipation | 215 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 40 A | - | - |
Height | 8.77 mm | - | - |
Length | 10.54 mm | - | - |
Width | 4.69 mm | - | - |
Brand | Infineon Technologies | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | SP001548090 | - | - |
Unit Weight | 0.211644 oz | - | - |