IRGP50B60PD1PBF vs IRGP50B60PD1PBF,GP50B60P vs IRGP50B60PD1PBF/XIGH48N6

 
PartNumberIRGP50B60PD1PBFIRGP50B60PD1PBF,GP50B60PIRGP50B60PD1PBF/XIGH48N6
DescriptionIGBT Transistors 600V Warp2 150kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.35 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation390 W--
Minimum Operating Temperature- 55 C--
PackagingTube--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001534060--
Unit Weight1.340411 oz--
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