IRGP50B60PD1PBF

Mfr. #:: IRGP50B60PD1PBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V Warp2 150kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRGP50B60PD1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRGP50B60PD1PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2.35 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 75 A

Pd - Power Dissipation:: 390 W

Minimum Operating Temperature:: - 55 C

Packaging:: Tube

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001534060

Unit Weight:: 1.340411 oz

Tags: IRGP50B60PD1P, IRGP50B60PD1, IRGP50B60P, IRGP50B, IRGP5, IRGP, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGP50B60PD1PBF Description

***p One Stop: Trans IGBT Chip N-CH 600V 75A 390000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3+Tab) TO-247AC

***ure Electronics: IRGP50 Series 600 V 45 A N-Channel IGBT w/ UltraFast Diode - TO-247AC

***(Formerly Allied Electronics): IGBT, with Ultrafast Soft Recovery Diode, 600 V, 33 A, TO-247AC

***ineon SCT: Copacked 600V Warp2 IGBT in a TO-247AC package with ultrafast switching frequency up to 150 kHz soft recovery diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 11 ns Power dissipation: 390 W

***ment14 APAC: IGBT, 600V, 75A, TO-247AC; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:75A; Device Marking:IRGP50B60PD1PbF; Package / Case:TO-247AC; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:150A; Rise Time:10ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 75A 390000mW Automotive 3-Pin(3+Tab) TO-247AD Tube

***ure Electronics: AUIRGP50B60PD1 Series 600 V 75 A N-Channel IGBT Flange Mount - TO-247AC

***ineon SCT: 600V Automotive Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ineon: Benefits: Optimized for 50-150kHz switching; Optimized for SMPS applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: Embedded Charger; HVAC Compressor

***nell: IGBT, 600V, 75A, WARP2, TO-247AD; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 2.35V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of P

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): IGBT with Ultrafast Soft Recovery Diode; Warp2 Series; 600 V; 22 A; TO-247AC

***ure Electronics: IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AD

***ark: TUBE / 600V Warp2 150kHz Copack IGBT in a TO-247AC package

***ure Electronics: IRGP35B60PD Series 600 V 60 A Ultrafast Soft Recovery Diode - TO247AD

***i-Key Marketplace: AUTOMOTIVE WARP2 IGBT ULTRAFAST

***ineon: Target Applications: AC-DC; Fan; PFC; Pump

***ical: Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247

***ca Corp: Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***ark: Transistor, Igbt, 600V, 75A, To-247 Rohs Compliant: Yes

***ure Electronics: 600V,48A G-series A3,B3,C3, TO-247

***S: French Electronic Distributor since 1988

***ical: Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD

***i-Key: IGBT 600V 75A 380W TO247AD

***co: IGBT Transistors GenX3 600V IGBT

***S: new, original packaged

***el Nordic: Contact for details

***ure Electronics: Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL

***ical: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel

***icroelectronics: 40 A, 600 V, very fast IGBT with Ultrafast diode

***nell: IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

IRGP50B60PD1PBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRGP50B60PD1PBF DISTI # V99:2348_13892489	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	420	1000:$4.1800 500:$4.4150 100:$4.9050 25:$5.8789 1:$6.9320
IRGP50B60PD1PBF DISTI # IRGP50B60PD1PBF-ND	Infineon Technologies AG	IGBT 600V 75A 390W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	875In Stock	1000:$4.4298 500:$5.0861 100:$5.8408 25:$6.7268 1:$7.8100
IRGP50B60PD1PBF DISTI # 32380822	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	2925	25:$6.3733
IRGP50B60PD1PBF DISTI # 31087041	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	725	750:$3.6750 350:$3.8304 200:$3.9264 150:$4.1184
IRGP50B60PD1PBF DISTI # 32031167	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	420	1000:$4.1800 500:$4.4150 100:$4.9050 25:$5.8789 2:$6.9320
IRGP50B60PD1PBF DISTI # IRGP50B60PD1PBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRGP50B60PD1PBF) RoHS: Compliant Min Qty: 25 Container: Tube	Americas - 547	150:$4.2900 200:$4.0900 350:$3.9900 750:$3.7900 1500:$3.7900
IRGP50B60PD1PBF DISTI # IRGP50B60PD1PBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP50B60PD1PBF) Min Qty: 84 Container: Bulk	Americas - 0	84:$3.8900 86:$3.6900 170:$3.5900 420:$3.3900 840:$3.3900
IRGP50B60PD1PBF DISTI # 63J7462	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 63J7462) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRGP50B60PD1PBF DISTI # 63J7462	Infineon Technologies AG	SINGLE IGBT, 600V, 75A,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	1907	500:$4.3600 250:$4.7800 100:$5.0100 50:$5.3900 25:$5.7600 10:$6.0500 1:$6.6900
IRGP50B60PD1PBF DISTI # 70017499	Infineon Technologies AG	IGBT,with Ultrafast Soft Recovery Diode,600 V,33 A,TO-247AC RoHS: Compliant	0	125:$11.2610
IRGP50B60PD1PBF DISTI # 942-IRGP50B60PD1PBF	Infineon Technologies AG	IGBT Transistors 600V Warp2 150kHz RoHS: Compliant	727	1:$7.4300 10:$6.7200 25:$6.4000 100:$5.5600 250:$5.3100 500:$4.8400 1000:$4.2200
IRGP50B60PD1PBF	Infineon Technologies AG	IRGP50 Series 600 V 45 A N-Channel IGBT w/ UltraFast Diode - TO-247AC RoHS: Compliant	4888Tube	2:$6.6400 10:$5.9400 25:$5.6800 50:$5.4900 100:$5.3100
IRGP50B60PD1PBF	International Rectifier	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant	960	1000:$3.5400 500:$3.7300 100:$3.8800 25:$4.0500 1:$4.3600
IRGP50B60PD1PBF	International Rectifier		2
IRGP50B60PD1PBF	International Rectifier	IGBT Transistor, TO-247AC	7	5:$4.8150 2:$6.4200 1:$9.6300
IRGP50B60PD1PBF DISTI # 6503561	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 75A TO247AC, EA	403	13:£4.6400 1:£5.1700
IRGP50B60PD1PBF DISTI # IRGP50B60PD1PBF	Infineon Technologies AG	Transistor: IGBT,600V,75A,390W,TO247-3	108	1:$8.0100 5:$7.3900 25:$5.8500 100:$5.1200
IRGP50B60PD1PBF DISTI # 8659672	Infineon Technologies AG	IGBT, 600V, 75A, TO-247AC RoHS: Compliant	1907	25:$9.6400 10:$10.1300 1:$11.2000
IRGP50B60PD1PBF DISTI # XSKDRABS0028647	Infineon Technologies AG	InsulatedGateBipolarTransistor,45AI(C),1200VV(BR)CES,N-Channel,TO-247AC RoHS: Compliant	155 in Stock0 on Order	155:$5.4600 150:$5.8560
IRGP50B60PD1PBF DISTI # XSFP00000002716	Infineon Technologies AG	IRGP50 Series 600 V 45 A N-ChannelIGBTw/UltraFastDiode - TO-247AC RoHS: Compliant	3925 in Stock0 on Order	3925:$8.3000 25:$8.8500
IRGP50B60PD1PBF DISTI # 8659672	Infineon Technologies AG	IGBT, 600V, 75A, TO-247AC RoHS: Compliant	1982	100:£4.3300 50:£4.6600 10:£4.9800 5:£5.7800 1:£6.3200

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IRGP50B60PD1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes