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IRGP50B60PD1PBF
P1-P3
P4-P6
P7-P9
P10-P10
IRGP50B60PD1PbF
4
www.irf.com
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3
Ω
; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3
Ω
; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0
5
10
15
20
V
GE
(V)
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 15A
I
CE
= 33A
I
CE
= 50A
0
5
10
15
20
V
GE
(V)
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 15A
I
CE
= 33A
I
CE
= 50A
0
1
02
03
04
05
06
0
I
C
(A)
0
200
400
600
800
1000
1200
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0
10
20
30
40
50
60
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
5
10
15
20
V
GE
(V)
0
100
200
300
400
500
600
700
800
900
I
C
E
(
A
)
T
J
= 25°
C
T
J
= 125°
C
T
J
= 125°
C
T
J
= 25°
C
1
10
100
0.8
1.2
1.6
2.0
2.4
FM
F
I nst
ant aneous F
or
w
ar
d C
u
r
re
n
t - I (A
)
Forward Voltage Drop - V (V)
T
=
150
°C
T
=
125
°C
T =
2
5°C
J
J
J
IRGP50B60PD1PbF
www.irf.com
5
Fig. 14
- Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200
µH; V
CE
= 390V, I
CE
= 33A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 15
- Typ. Output Capacitance
Stored Energy vs. V
CE
Fig. 17
- Typical Gate Charge
vs. V
GE
I
CE
= 33A
0
5
10
15
20
25
R
G
(
Ω
)
300
400
500
600
700
800
900
1000
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0
5
10
15
20
25
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
50
100
150
200
250
Q
G
, Tota
l Gate
Cha
rge
(nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
400V
0
20
40
60
80
100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0
100
200
300
400
500
600
700
V
CE
(V)
0
10
20
30
40
E
o
e
s
(
µ
J
)
Fig. 18
- Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 33A, V
GE
= 15V
-50
0
50
100
150
200
T
J
(°C)
0.8
1.0
1.2
1.4
N
o
r
m
a
l
i
z
e
d
V
C
E
(
o
n
)
(
V
)
IRGP50B60PD1PbF
6
www.irf.com
Fig. 20
-
Typical
Recovery Current
vs.
di
f
/dt
Fig. 19
-
Typical Reverse
Recovery vs.
di
f
/dt
Fig. 21
- Typical
Stored Charge
vs.
di
f
/dt
Fig.
22
-
Typical di
(rec)M
/dt
vs. di
f
/dt,
20
40
60
80
100
100
1000
f
d
i /d
t - (A/µ
s)
t
-
(ns)
rr
I = 30
A
I = 15
A
I = 5.
0A
F
F
F
V = 200V
T
=
125°
C
T = 2
5°
C
R
J
J
1
10
100
100
1000
f
di
/dt - (
A/µ
s)
I
- (
A)
IRR
M
I = 5.
0A
I = 15
A
I = 3
0A
F
F
F
V = 200V
T
=
125°
C
T = 2
5°
C
R
J
J
0
200
400
600
800
100
1000
f
d
i /d
t - (A/µ
s
)
RR
Q
- (n
C)
I = 30
A
I = 1
5A
I =
5
.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100
1000
f
di
/dt - (
A/µ
s)
di(r
e
c
)M/
dt -
(A/µ
s)
I =
5
.0A
I =
15A
I = 3
0A
F
F
F
V = 200V
T
=
125°
C
T = 2
5°
C
R
J
J
P1-P3
P4-P6
P7-P9
P10-P10
IRGP50B60PD1PBF
Mfr. #:
Buy IRGP50B60PD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Warp2 150kHz
Lifecycle:
New from this manufacturer.
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IRGP50B60PD1PBF