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IRGP50B60PD1PBF
P1-P3
P4-P6
P7-P9
P10-P10
IRGP50B60PD1PbF
www.irf.com
7
Fig. 24.
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23.
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
1
, R
ectangular
Pul
se Durat
ion (
sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1/t2
2. P
eak Tj
= P dm
x Zthj
c + T
c
Ri (°C/W)
τ
i (sec)
0.363 0.000112
0.864 0.001184
0.473 0.032264
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
1
, R
ectangular
Pul
se Durat
ion (s
ec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1/t2
2. P
eak Tj
= P dm
x Zthj
c + T
c
Ri (°C/W)
τ
i (sec)
0.157 0.000346
0.163 4.28
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRGP50B60PD1PbF
8
www.irf.com
Fig.C.T.1
- Gate Charge Circuit (turn-off)
Fig.C.T.2
- RBSOA Circuit
L
Rg
80 V
DU
T
48
0
V
1K
VC
C
DU
T
0
L
Fig.C.T.4
- Resistive Load Circuit
Rg
VC
C
DU
T
R =
V
CC
I
CM
Fig.C.T.3
- Switching Loss Circuit
Fig. C.T.5
- Reverse Recovery Parameter
Test Circuit
REVERSE RECOVERY CIR
CUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJ
U
ST
PFC diode
L
Rg
VCC
DUT /
DRIVE
R
IRGP50B60PD1PbF
www.irf.com
9
Fig. WF1
- Typ. Turn-off Loss Waveform
@ T
J
= 25°C using Fig. CT.3
Fig. WF2
- Typ. Turn-on Loss Waveform
@ T
J
= 25°C using Fig. CT.3
Fig. WF3
- Reverse Recovery Waveform and
Definitions
-1
00
-50
0
50
100
150
200
250
300
350
400
450
500
550
600
-0
.20
0
.0
0
0
.2
0
0
.
4
0
Time
(
µ
s
)
V
CE
(V
)
-10
0
10
20
30
40
50
60
I
CE
(A
)
90% I
CE
5% I
CE
5% V
CE
Eo
f
f
tf
-50
0
50
100
150
200
250
300
350
400
450
-0
.10
0
.0
0
0
.10
0.2
0
Time
(µ
s
)
V
CE
(V
)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
90% I
CE
5% V
CE
10% I
CE
E
on Los
s
tr
TEST
C
URRENT
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak
rate of change
of
current during t
b
portion of
t
rr
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec
)M/
dt
0.
75
I
RRM
5
4
3
2
0
1
di
/dt
f
1. di
f
/dt - Rate
of change of
current
through zero crossing
2. I
RRM
- Peak
reverse recovery current
3. trr - Reverse
recovery time measured
from zero crossing
point of negative
going I
F
to
point where a
line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
P1-P3
P4-P6
P7-P9
P10-P10
IRGP50B60PD1PBF
Mfr. #:
Buy IRGP50B60PD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Warp2 150kHz
Lifecycle:
New from this manufacturer.
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IRGP50B60PD1PBF