IRGP50B60PD1PbF
2 www.irf.com
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ./ I
C
, where V
CE(on)
typ.= 2.00V and I
C
=33A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 µH, R
G
= 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V
V
GE
= 0V, I
C
= 500µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —0.31—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-125°C)
R
G
Internal Gate Resistance — 1.7 —
Ω
1MHz, Open Collector
—2.002.35
I
C
= 33A, V
GE
= 15V
4, 5,6,8,9
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.45 2.85 V
I
C
= 50A, V
GE
= 15V
—2.602.95
I
C
= 33A, V
GE
= 15V, T
J
= 125°C
—3.203.60
I
C
= 50A, V
GE
= 15V, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage 3.0 4.0 5.0 V
I
C
= 250µA
7,8,9
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -10 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA
gfe Forward Transconductance — 41 — S
V
CE
= 50V, I
C
= 33A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 5.0 500 µA
V
GE
= 0V, V
CE
= 600V
—1.0—mA
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
V
FM
Diode Forward Voltage Drop — 1.30 1.70 V
I
F
= 15A, V
GE
= 0V
10
—1.201.60
I
F
= 15A, V
GE
= 0V, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V, V
CE
= 0V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Qg Total Gate Charge (turn-on) — 205 308
I
C
= 33A
17
Q
gc
Gate-to-Collector Charge (turn-on) — 70 105 nC
V
CC
= 400V
CT1
Q
ge
Gate-to-Emitter Charge (turn-on) — 30 45
V
GE
= 15V
E
on
Turn-On Switching Loss — 255 305
I
C
= 33A, V
CC
= 390V
CT3
E
off
Turn-Off Switching Loss — 375 445 µJ
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
E
total
Total Switching Loss — 630 750
TJ = 25°C
t
d(on)
Turn-On delay time — 30 40
I
C
= 33A, V
CC
= 390V
CT3
t
r
Rise time — 10 15 ns
V
GE
= +15V, R
G
= 3.3
Ω
, L = 200µH
t
d(off)
Turn-Off delay time — 130 150
T
J
= 25°C
t
f
Fall time — 11 15
E
on
Turn-On Switching Loss — 580 700
I
C
= 33A, V
CC
= 390V
CT3
E
off
Turn-Off Switching Loss — 480 550 µJ
V
GE
= +15V, R
G
= 3.3
Ω
, L = 200µH
11,13
E
total
Total Switching Loss — 1060 1250
T
J
= 125°C
WF1,WF2
t
d(on)
Turn-On delay time — 26 35
I
C
= 33A, V
CC
= 390V
CT3
t
r
Rise time — 13 20 ns
V
GE
= +15V, R
G
= 3.3Ω, L = 200µH
12,14
t
d(off)
Turn-Off delay time — 146 165
T
J
= 125°C
WF1,WF2
t
f
Fall time — 15 20
C
ies
Input Capacitance — 3648 —
V
GE
= 0V
16
C
oes
Output Capacitance — 322 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 56 — pF f = 1Mhz
C
oes
eff.
Effective Output Capacitance (Time Related)
—215—
V
GE
= 0V, V
CE
= 0V to 480V
15
C
oes
eff. (ER)
Effective Output Capacitance (Ener
Related)
—163—
T
J
= 150°C, I
C
= 150A
3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
CT2
Rg = 22Ω, V
GE
= +15V to 0V
t
rr
Diode Reverse Recovery Time — 42 60 ns
T
J
= 25°C I
F
= 15A, V
R
= 200V,
19
—74120
T
J
= 125°C
di/dt = 200A/µs
Q
rr
Diode Reverse Recovery Charge — 80 180 nC
T
J
= 25°C I
F
= 15A, V
R
= 200V,
21
— 220 600
T
J
= 125°C
di/dt = 200A/µs
I
rr
Peak Reverse Recovery Current — 4.0 6.0 A
T
J
= 25°C I
F
= 15A, V
R
= 200V,
19,20,21,22
—6.510
T
J
= 125°C
di/dt = 200A/µs
CT5
Conditions
