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| PartNumber | IRGP50B60PD1PBF | IRGP50B60PDPBF | IRGP50B60PD1-EP |
| Description | IGBT Transistors 600V Warp2 150kHz | IGBT Transistors 600V Warp2 150kHz | IGBT Transistors 600V Warp2 150kHz |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.35 V | 2 V | 2 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 75 A | 75 A | 75 A |
| Pd Power Dissipation | 390 W | 370 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Packaging | Tube | Tube | Tube |
| Height | 20.7 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 400 | 400 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | SP001534060 | SP001536552 | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | 0.229281 oz |
| Maximum Operating Temperature | - | + 150 C | - |
| Continuous Collector Current Ic Max | - | 75 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Series | - | - | - |
| Package Case | - | - | TO-3P-3 Full Pack |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Power Max | - | - | 390W |
| Reverse Recovery Time trr | - | - | 42ns |
| Current Collector Ic Max | - | - | 75A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 150A |
| Vce on Max Vge Ic | - | - | 2.85V @ 15V, 50A |
| Switching Energy | - | - | 255μJ (on), 375μJ (off) |
| Gate Charge | - | - | 205nC |
| Td on off 25°C | - | - | 30ns/130ns |
| Test Condition | - | - | 390V, 33A, 3.3 Ohm, 15V |
| Pd Power Dissipation | - | - | 390 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGP50B60PD1PBF | IGBT Transistors 600V Warp2 150kHz | |
| IRGP50B60PD1-EP | IGBT Transistors 600V Warp2 150kHz | ||
| IRGP50B60PDPBF | IGBT Transistors 600V Warp2 150kHz | ||
| IRGP50B60PD1PBF | IGBT Transistors 600V Warp2 150kHz | ||
Infineon / IR |
IRGP50B60PDPBF | IGBT Transistors 600V Warp2 150kHz | |
| IRGP50B60PDPBF. | Soft Recovery Diode | ||
| IRGP50B60 | New and Original | ||
| IRGP50B60PD | New and Original | ||
| IRGP50B60PD1 | New and Original | ||
| IRGP50B60PD1-EPBF | New and Original | ||
| IRGP50B60PD1PBF,GP50B60P | New and Original | ||
| IRGP50B60PD1PBF. | New and Original | ||
| IRGP50B60PD1PBF/XIGH48N6 | New and Original | ||
| IRGP50B60PDPBF,GP50B60PD | New and Original | ||
| IRGP50B60PDPBF,IRGP50B60 | New and Original |