IRGP50B60PDPBF

Mfr. #:: IRGP50B60PDPBF
Manufacturer:: Infineon / IR
Description:: IGBT Transistors 600V Warp2 150kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRGP50B60PDPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRGP50B60PDPBF Datasheet IRGP50B60PDPBF Datasheet (P4-P6)IRGP50B60PDPBF Datasheet (P7-P9)IRGP50B60PDPBF Datasheet (P10-P11)
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More Information:: IRGP50B60PDPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 75 A

Pd - Power Dissipation:: 370 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 75 A

Height:: 20.7 mm

Length:: 15.87 mm

Width:: 5.31 mm

Brand:: Infineon / IR

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 400

Subcategory:: IGBTs

Part # Aliases:: SP001536552

Unit Weight:: 1.340411 oz

Tags: IRGP50B60PDP, IRGP50B60P, IRGP50B, IRGP5, IRGP, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGP50B60PDPBF Description

***ource: 600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD with Standard Packaging

***ure Electronics: Igbt With Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3

***ow.cn: Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: Copacked 600V Warp2 IGBT in a TO-247AC package with a ultrafast 150kHz soft recovery diode, TO247COPAK-3, RoHS

*** Electronic Components: IGBT Transistors 600V Warp2 150kHz

***ineon: Target Applications: AC-DC; Fan; Pump

***Yang: , IGBT, , N, 300V, 70A, TO-247AC

***or: AUTOMOTIVE WARP2 IGBT ULTRAFAST

***nell: IGBT, SINGLE, N-CH, 600V, 75A, TO-247AC; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 370W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No

***ical: Trans IGBT Chip N-CH 600V 75A 390000mW Automotive 3-Pin(3+Tab) TO-247AD Tube

***ure Electronics: AUIRGP50B60PD1 Series 600 V 75 A N-Channel IGBT Flange Mount - TO-247AC

***ineon SCT: 600V Automotive Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ineon: Benefits: Optimized for 50-150kHz switching; Optimized for SMPS applications; 150C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: Embedded Charger; HVAC Compressor

***nell: IGBT, 600V, 75A, WARP2, TO-247AD; DC Collector Current: 75A; Collector Emitter Saturation Voltage Vce(on): 2.35V; Power Dissipation Pd: 390W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of P

***ical: Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247

***ca Corp: Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***ark: Transistor, Igbt, 600V, 75A, To-247 Rohs Compliant: Yes

***ure Electronics: 600V,48A G-series A3,B3,C3, TO-247

***S: French Electronic Distributor since 1988

***ark: Igbt Single Transistor, 80 A, 2.5 V, 260 W, 600 V, Max-247, 3

***ical: Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube

***nell: IGBT, 600V, 40A, TO-247 MAX; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic @ Vce Sat: 40A; Current Ic Continuous a Max: 80A; Current Temperature: 25°C; Fall Time tf: 45ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Power Dissipation Ptot Max: 260W; Pulsed Current Icm: 200A; Rise Time: 19ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***hine Compare: Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC

***ineon SCT: 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

*** Electronics: IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ure Electronics: Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL

***ical: Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel

***icroelectronics: 40 A, 600 V, very fast IGBT with Ultrafast diode

***nell: IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

IRGP50B60PDPBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRGP50B60PDPBF DISTI # V99:2348_13892493	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	28	1000:$4.4500 500:$4.4810 250:$5.4280 100:$5.8930 25:$6.8540 10:$7.3530 1:$8.0570
IRGP50B60PDPBF DISTI # V36:1790_13892493	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	0
IRGP50B60PDPBF DISTI # IRGP50B60PDPBF-ND	Infineon Technologies AG	IGBT 600V 75A 370W TO247AC RoHS: Compliant Min Qty: 1 Container: Bag	2586In Stock	1000:$5.1391 500:$5.9005 100:$6.7761 10:$8.1850 1:$9.0600
IRGP50B60PDPBF DISTI # 32381299	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	4500	25:$6.9733
IRGP50B60PDPBF DISTI # 32669130	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	273	1250:$4.2144 625:$4.3104 300:$4.4064 175:$4.5984 125:$4.7904
IRGP50B60PDPBF DISTI # 31011358	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	28	1000:$4.7838 500:$4.8171 250:$5.8351 100:$6.3350 25:$7.3681 10:$7.9045 2:$8.6613
IRGP50B60PDPBF DISTI # SP001536552	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC (Alt: SP001536552) RoHS: Compliant Min Qty: 1	Europe - 250	1:€4.9900 10:€4.5900 25:€4.3900 50:€4.1900 100:€4.0900 500:€3.8900 1000:€3.6900
IRGP50B60PDPBF DISTI # IRGP50B60PDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC (Alt: IRGP50B60PDPBF) RoHS: Compliant Min Qty: 400	Asia - 0	400:$4.9801 800:$4.8418 1200:$4.7110 2000:$4.5870 4000:$4.5274 10000:$4.4694 20000:$4.4128
IRGP50B60PDPBF DISTI # IRGP50B60PDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP50B60PDPBF) Min Qty: 81 Container: Bulk	Americas - 0	81:$4.4900 83:$4.2900 164:$4.1900 405:$3.9900 810:$3.8900
IRGP50B60PDPBF DISTI # IRGP50B60PDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRGP50B60PDPBF) RoHS: Compliant Min Qty: 400 Container: Tube	Americas - 0	400:$5.0232 800:$4.8418 1600:$4.6668 2400:$4.5098 4000:$4.4296
IRGP50B60PDPBF DISTI # 31K2330	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 31K2330) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRGP50B60PDPBF DISTI # 31K2330	Infineon Technologies AG	Soft Recovery Diode,DC Collector Current:75A,Collector Emitter Saturation Voltage Vce(on):3.6V,Power Dissipation Pd:370W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-RoHS Compliant: Yes	64	500:$5.6200 250:$6.1600 100:$6.4500 50:$6.9400 25:$7.4300 10:$7.7900 1:$8.6200
IRGP50B60PDPBF DISTI # 70018499	Infineon Technologies AG	600V WARP2 150KHZ COPACK IGBT IN A TO-247AC PACKAGE RoHS: Compliant	0	125:$12.9900
IRGP50B60PDPBF	Infineon Technologies AG	IRGP50B60PDPbF Series 600 V 75 A Ultrafast Soft Recovery Diode - TO-247AC RoHS: Compliant	7495Tube	25:$8.7150 100:$7.8435 99999:$6.6815
IRGP50B60PDPBF DISTI # 942-IRGP50B60PDPBF	Infineon Technologies AG	IGBT Transistors 600V Warp2 150kHz RoHS: Compliant	240	1:$8.6200 10:$7.7900 25:$7.4300 100:$6.4500 250:$6.1600 500:$5.6200 1000:$4.8900
IRGP50B60PDPBF	International Rectifier	RoHS: Not Compliant	258	1000:$4.1100 500:$4.3200 100:$4.5000 25:$4.6900 1:$5.0500
IRGP50B60PDPBF	International Rectifier		13
IRGP50B60PDPBF DISTI # 8640984P	Infineon Technologies AG	IGBT 600V 75A ULTRAFAST DIODE SMPS TO247, TU	66	1000:£3.6500 500:£3.9400 250:£4.3400 100:£4.5600
IRGP50B60PDPBF DISTI # XSFP00000074479	Infineon Technologies AG	RoHS: Compliant	4047 in Stock0 on Order	4047:$9.1000 13:$9.6400
IRGP50B60PDPBF DISTI # XSKDRABS0006950	Infineon Technologies AG	RoHS: Compliant	200 in Stock0 on Order	200:$6.3360 125:$6.7920
IRGP50B60PDPBF DISTI # 2576899	Infineon Technologies AG	IGBT, SINGLE, N-CH, 600V, 75A, TO-247AC RoHS: Compliant	1100	2500:$7.1000 1000:$7.3700 500:$8.4700 250:$9.2800 100:$9.7200 25:$11.2000 10:$11.7400 1:$12.9900
DEL-IRGP50B60PDPBF. DISTI # 2066606	Infineon Technologies AG	Soft Recovery Diode RoHS: Compliant	64	2500:$7.1000 1000:$7.3700 500:$8.4700 250:$9.2800 100:$9.7200 25:$11.2000 10:$11.7400 1:$12.9900
IRGP50B60PDPBF DISTI # 2576899	Infineon Technologies AG	IGBT, SINGLE, N-CH, 600V, 75A, TO-247AC RoHS: Compliant	1103	100:£5.0200 50:£5.4100 10:£5.7800 5:£6.7100 1:£7.2700

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IRGP50B60PDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes