OMO ElectronicOMO Electronic
Expand menu
0 Cart

IRGP50B60PDPBF

P1-P3P4-P6P7-P9P10-P11
IRGP50B60PDPbF
www.irf.com 7
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 25 - Forward SOA, T
C
= 25°C; T
J
≤ 150°C
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0789 0.000277
0.2614 0.040918
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0733 0.000420
0.1301 0.002274
0.1358 0.023026
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY V
CE
(on)
Tc = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
100msec
IRGP50B60PDPbF
8 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
L
Rg
80 V
DUT
480V
1K
VCC
DUT
0
L
Fig.C.T.4 - Resistive Load Circuit
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.3 - Switching Loss Circuit
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
P
FC diode
L
Rg
VC
C
DUT /
DRIVER
IRGP50B60PDPbF
www.irf.com 9
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T
J
= 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ T
J
= 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75
I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
-100
0
100
200
300
400
500
600
700
-0.05 0 0.05 0.1 0.15
Time (uS)
Vce (V)
-5
0
5
10
15
20
25
30
35
Ice (A)
tf
Eof f Los s
90% Ice
5% Vce
5% Ice
Vce
Ice
-100
0
100
200
300
400
500
600
700
3.95 4.05 4.15 4.25
Time (uS)
Vce (V)
-10
0
10
20
30
40
50
60
70
Ice (A)
Eo n
Loss
tr
90% Ice
10% Ice
5% Vce
Vce
Ice
P1-P3P4-P6P7-P9P10-P11

IRGP50B60PDPBF

Mfr. #:
Buy IRGP50B60PDPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V Warp2 150kHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet