 | |  | |
| PartNumber | IRGP50B60PD1 | IRGP50B60PD1-EPBF | IRGP50B60PD1-EP |
| Description | IGBT Transistors 600V Warp2 150kHz | ||
| Manufacturer | IR | - | Infineon Technologies |
| Product Category | IGBTs - Single | - | IGBTs - Single |
| Series | - | - | - |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.229281 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-3P-3 Full Pack |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD |
| Configuration | - | - | Single |
| Power Max | - | - | 390W |
| Reverse Recovery Time trr | - | - | 42ns |
| Current Collector Ic Max | - | - | 75A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 150A |
| Vce on Max Vge Ic | - | - | 2.85V @ 15V, 50A |
| Switching Energy | - | - | 255μJ (on), 375μJ (off) |
| Gate Charge | - | - | 205nC |
| Td on off 25°C | - | - | 30ns/130ns |
| Test Condition | - | - | 390V, 33A, 3.3 Ohm, 15V |
| Pd Power Dissipation | - | - | 390 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Collector Emitter Saturation Voltage | - | - | 2 V |
| Continuous Collector Current at 25 C | - | - | 75 A |
| Maximum Gate Emitter Voltage | - | - | +/- 20 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGP50B60PD1PBF | IGBT Transistors 600V Warp2 150kHz | |
| IRGP50B60PD1-EP | IGBT Transistors 600V Warp2 150kHz | ||
| IRGP50B60PD1PBF | IGBT Transistors 600V Warp2 150kHz | ||
| IRGP50B60PD1 | New and Original | ||
| IRGP50B60PD1-EPBF | New and Original | ||
| IRGP50B60PD1PBF,GP50B60P | New and Original | ||
| IRGP50B60PD1PBF. | New and Original | ||
| IRGP50B60PD1PBF/XIGH48N6 | New and Original |