IXFN170N25X3 vs IXFN170N30P vs IXFN170N10

 
PartNumberIXFN170N25X3IXFN170N30PIXFN170N10
DescriptionMOSFET 250V/170A Ultra Junc tion X3-Class MOSFETMOSFET 138 Amps 300V 0.018 RdsMOSFET 170 Amps 100V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage250 V300 V100 V
Id Continuous Drain Current146 A138 A170 A
Rds On Drain Source Resistance6.1 mOhms18 mOhms10 mOhms
Vgs th Gate Source Threshold Voltage2.5 V4.5 V-
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge190 nC258 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation390 W890 W600 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
SeriesX3-ClassIXFN170N30IXFN170N10
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Forward Transconductance Min66 S57 S-
Fall Time7 ns16 ns79 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns29 ns90 ns
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time62 ns79 ns158 ns
Typical Turn On Delay Time18 ns41 ns40 ns
Unit Weight1.058219 oz1.058219 oz1.058219 oz
Height-12.22 mm9.6 mm
Length-38.23 mm38.3 mm
Type-Polar Power MOSFET HiPerFET-
Width-25.42 mm25.07 mm
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