IXFN170N10

IXFN170N10
Mfr. #:
IXFN170N10
Manufacturer:
Littelfuse
Description:
MOSFET 170 Amps 100V
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN170N10 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
170 A
Rds On - Drain-Source Resistance:
10 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
600 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HyperFET
Packaging:
Tube
Height:
9.6 mm
Length:
38.3 mm
Series:
IXFN170N10
Transistor Type:
1 N-Channel
Width:
25.07 mm
Brand:
IXYS
Fall Time:
79 ns
Product Type:
MOSFET
Rise Time:
90 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
158 ns
Typical Turn-On Delay Time:
40 ns
Unit Weight:
1.058219 oz
Tags
IXFN17, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 100V 170A 4-Pin SOT-227B
***ark
Mosfet, N, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Part # Mfg. Description Stock Price
IXFN170N10
DISTI # V99:2348_17752600
IXYS CorporationTrans MOSFET N-CH Si 100V 170A 4-Pin SOT-227B
RoHS: Compliant
4
  • 50:$29.6200
  • 25:$30.3200
  • 10:$31.3300
  • 5:$32.3300
  • 1:$33.3400
IXFN170N10
DISTI # IXFN170N10-ND
IXYS CorporationMOSFET N-CH 100V 170A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$34.9460
IXFN170N10
DISTI # 27577069
IXYS CorporationTrans MOSFET N-CH Si 100V 170A 4-Pin SOT-227B
RoHS: Compliant
4
  • 50:$31.8415
  • 25:$32.5940
  • 10:$33.6797
  • 5:$34.7548
  • 1:$35.8405
IXFN170N10
DISTI # 97K2550
IXYS CorporationMOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:170A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:600W RoHS Compliant: Yes1704
  • 250:$28.5600
  • 100:$30.6000
  • 50:$31.6700
  • 25:$32.5800
  • 10:$33.4900
  • 5:$34.3900
  • 1:$35.3000
IXFN170N10
DISTI # 747-IXFN170N10
IXYS CorporationMOSFET 170 Amps 100V
RoHS: Compliant
0
  • 10:$34.9500
  • 30:$32.3200
  • 50:$31.3600
  • 100:$30.3000
  • 200:$28.2800
IXFN170N10
DISTI # 9359222
IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant
1719
  • 10:$52.7400
  • 5:$55.7300
  • 1:$56.8000
IXFN170N10
DISTI # 9359222
IXYS CorporationMOSFET, N, SOT-227B1974
  • 10:£26.4700
  • 5:£26.7300
  • 1:£27.0000
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IXFN102N30P

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IXFN130N30

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Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of IXFN170N10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$34.95
$349.50
30
$32.32
$969.60
50
$31.36
$1 568.00
100
$30.30
$3 030.00
200
$28.28
$5 656.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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