PartNumber | IXTH6N100D2 | IXTH6N120 | IXTH6N150 |
Description | MOSFET 6Amps 1000V | MOSFET 6 Amps 1200V 2.700 Rds | MOSFET HIGH VOLT PWR MOSFET 1500V 6A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | 500 V |
Id Continuous Drain Current | 6 A | 6 A | 6 A |
Rds On Drain Source Resistance | 2.2 Ohms | 2.4 Ohms | 3.5 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 95 nC | - | 67 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 300 W | 300 W | 540 W |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | 21.46 mm | - |
Length | 16.26 mm | 16.26 mm | - |
Series | IXTH6N100 | IXTH6N120 | IXTH6N150 |
Type | Depletion Mode MOSFET | - | High Voltage Power MOSFET |
Width | 5.3 mm | 5.3 mm | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 2.6 S | - | 6.5 mS |
Fall Time | 47 ns | 18 ns | 38 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 80 ns | 33 ns | 20 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 34 ns | 42 ns | 50 ns |
Typical Turn On Delay Time | 25 ns | 28 ns | 22 ns |
Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | - |
Vgs th Gate Source Threshold Voltage | - | - | 5 V |
Product | - | - | Power MOSFET |