IXTH6N100D2 vs IXTH6N120 vs IXTH6N150

 
PartNumberIXTH6N100D2IXTH6N120IXTH6N150
DescriptionMOSFET 6Amps 1000VMOSFET 6 Amps 1200V 2.700 RdsMOSFET HIGH VOLT PWR MOSFET 1500V 6A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV1.2 kV500 V
Id Continuous Drain Current6 A6 A6 A
Rds On Drain Source Resistance2.2 Ohms2.4 Ohms3.5 Ohms
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge95 nC-67 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation300 W300 W540 W
PackagingTubeTubeTube
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXTH6N100IXTH6N120IXTH6N150
TypeDepletion Mode MOSFET-High Voltage Power MOSFET
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min2.6 S-6.5 mS
Fall Time47 ns18 ns38 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time80 ns33 ns20 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time34 ns42 ns50 ns
Typical Turn On Delay Time25 ns28 ns22 ns
Unit Weight0.056438 oz0.229281 oz0.229281 oz
Number of Channels-1 Channel-
Configuration-Single-
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel-
Vgs th Gate Source Threshold Voltage--5 V
Product--Power MOSFET
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