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IXTH6N120

IXTH6N120
Mfr. #:
IXTH6N120
Manufacturer:
Littelfuse
Description:
MOSFET 6 Amps 1200V 2.700 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXTH6N120 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
2.4 Ohms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
300 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
21.46 mm
Length:
16.26 mm
Series:
IXTH6N120
Transistor Type:
1 N-Channel
Width:
5.3 mm
Brand:
IXYS
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
33 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
42 ns
Typical Turn-On Delay Time:
28 ns
Unit Weight:
0.229281 oz
Tags
IXTH6N1, IXTH6N, IXTH6, IXTH, IXT
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Single N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
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Trans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
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N Channel Mosfet, 1Kv, 6.1A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:6.1A; On Resistance Rds(On):2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***ment14 APAC
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.1A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, 1000V, 6.1A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:6A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:180W; Power, Pd:180W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.65°C/W; Transistors, No. of:1; Voltage, Vds:1000V; Voltage, Vds Max:1000V
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IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC
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Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC
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MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:6.7A; On Resistance, Rds(on):1.6ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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N-Channel 1200 V 290 mO 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™
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MOSFET, N-CH, 1.2KV, 20A, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.169ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.5V;
***ark
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:175W; Msl:-Rohs Compliant: Yes
Part # Mfg. Description Stock Price
IXTH6N120
DISTI # 30284411		IXYS CorporationTrans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		570
  • 30:$9.0133
IXTH6N120
DISTI # IXTH6N120-ND		IXYS CorporationMOSFET N-CH 1200V 6A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Box		Temporarily Out of Stock
  • 30:$8.2617
IXTH6N120
DISTI # 747-IXTH6N120		IXYS CorporationMOSFET 6 Amps 1200V 2.700 Rds
RoHS: Compliant		113
  • 1:$11.5800
  • 10:$10.4300
  • 25:$8.6800
  • 50:$8.0600
  • 100:$7.8800
  • 250:$7.1900
  • 500:$6.5600
  • 1000:$6.2600
IXTH6N120IXYS CorporationSingle N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
RoHS: Compliant		967Tube
  • 2:$10.5200
  • 10:$8.8900
  • 25:$8.3100
  • 50:$7.9000
  • 100:$7.5100
IXTH6N120
DISTI # XSFP00000008501		IXYS CorporationPowerField-EffectTransistor,30AI(D),200V,0.075ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-247AC
RoHS: Compliant		780
  • 780:$13.1500
  • 30:$14.0300
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Availability
Stock:
101
On Order:
2084
Enter Quantity:
Current price of IXTH6N120 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.58
$11.58
10
$10.43
$104.30
25
$8.26
$206.50
50
$8.06
$403.00
100
$7.88
$788.00
250
$7.19
$1 797.50
500
$6.56
$3 280.00
1000
$6.26
$6 260.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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